MA2SP050GL Discrete Semiconductor Products |
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Allicdata Part #: | MA2SP050GLTR-ND |
Manufacturer Part#: |
MA2SP050GL |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | DIODE PIN 60V 50MA SSMINI-2P |
More Detail: | RF Diode PIN - Single 60V 50mA SSMini2-F4 |
DataSheet: | MA2SP050GL Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.10672 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 60V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 2.4pF @ 0V, 1MHz |
Resistance @ If, F: | 5.5 Ohm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SSMini2-F4 |
Base Part Number: | MA2SP05 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA2SP050GL is a high-performance RF diode component, which is designed to provide superior performance in demanding applications. The component is manufactured using a Gallium Arsenide (GaAs) technology and has a proven track record of providing excellent performance in a wide range of frequencies up to 10GHz. Its advanced design allows it to provide superior performance compared to other components in its class.
Applications
The MA2SP050GL offers a wide range of applications including filtering, signal switching, and noise cancellation. Its high power handling capability makes it ideal for use in high-frequency, high-power signal processing and signal conditioning applications. Additionally, the component can be used for applications such as signal attenuation, dynamic signal processing, analog-to-digital conversion, signal stabilization, and digital signal processing. As a result of its excellent performance and flexibility, it is an ideal component for a variety of RF applications.
Working Principle
The MA2SP050GL operates on a principle of reverse bias voltage. When a reverse bias voltage is applied to the component, a layer of very thin, non-conducting layer of Indium Gallium Arsenide (InGaAs) is created on the surface of the component. This layer is then used to control the flow of charge carriers within the component. At the same time, this layer also has the ability to shift the frequency of the signal passing through the component, providing increased sensitivity and improved linearity. Additionally, the component features a number of adjustments which can be used to tailor its performance based on the application requirements.
Conclusion
The MA2SP050GL is an extremely useful component which is widely used in RF applications due to its high performance, flexibility, and robustness. The component is manufactured using advanced Gallium Arsenide technology and can be used for a wide variety of tasks requiring reliable and high-performance components. The component also features a number of adjustable parameters which can be adjusted to tailor its performance. As a result, the MA2SP050GL is an excellent choice for a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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