MAP5KE9.0CAE3 Allicdata Electronics
Allicdata Part #:

1086-4468-ND

Manufacturer Part#:

MAP5KE9.0CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 9V 15.4V DO204AL
More Detail: N/A
DataSheet: MAP5KE9.0CAE3 datasheetMAP5KE9.0CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 15.4V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 32.5A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 10V
Voltage - Reverse Standoff (Typ): 9V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MAP5KE9.0CAE3 is a type of TVS - Diodes which is specially designed to provide protection from dangerous transient voltage generated by electrostatic discharge (ESD). The diode is designed for use in high power applications and to protect circuit components from damage due to overvoltages created by lightning, electrical spikes or other high-voltage transients.

The MAP5KE9.0CAE3 is a unidirectional TVS-diode which is available in a buried termination (BT) package and is ideal for applications such as automotive, computing, audio/video, instrumentation, medical and other industrial equipment.

The diode is rated for an operating voltage of 5V and a peak pulse power of 600W, with a maximum surge current rating of 9A. The power rating indicates the amount of power that the diode can absorb without being destroyed. The MAP5KE9.0CAE3 is designed to suppress voltage transients of up to 8.125kV (for 8/20μs).

The TVS - Diodes work on the principle of avalanche breakdown. When a reverse biased diode is exposed to a voltage greater than the breakdown voltage, the electric field in the junction increases rapidly and electrons get accelerated to higher speeds resulting in an avalanche of carriers near the junction. This results in an increased current flow, which is the basis of the avalanche breakdown mechanism.

The MAP5KE9.0CAE3 can provide protection from ESD, overvoltage transients, and high-energy pulses. As an unidirectional TVS-diode, it is designed to only conduct in one direction and to act as a short-circuit when the voltage rises above the peak pulse power rating. This allows it to absorb and protect against excessive current. The fast response time of the diode helps to ensure that no damage is done to the circuit components that it is protecting.

The MAP5KE9.0CAE3 is a robust and reliable device and is designed to function in high-temperature operating environments. The diode also offers excellent high-frequency noise protection, making it suitable for use in many applications where noise suppression is important.

In conclusion, the MAP5KE9.0CAE3 is a robust TVS - Diodes which is designed to provide protection from electrostatic discharge, overvoltage transients, and high-energy pulses from lightning, electrical spikes, and other high-voltage transients. The diode operates on the principle of avalanche breakdown and is designed to absorb the excessive current in order to protect the circuit components from damage due to overvoltages. It is a reliable and fast responding device which is suitable for use in many applications where noise suppression is important.

The specific data is subject to PDF, and the above content is for reference

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