MAP5KE70AE3 Allicdata Electronics
Allicdata Part #:

1086-4442-ND

Manufacturer Part#:

MAP5KE70AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70V 113V DO204AL
More Detail: N/A
DataSheet: MAP5KE70AE3 datasheetMAP5KE70AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 113V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 4.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppressors (TVS) diodes, also known as surge absorbers, are components used to protect sensitive electronic components from transient voltage spikes. The MAP5KE70AE3 is one such component, specifically designed for applications such as automotive, portable electronics and telecommunications. It is an especially well suited solution for systems that need to defend against lightning strikes.

The MAP5KE70AE3 is a silicon-based, unidirectional diode designed to protect electronic circuits from transient voltage surges. It is packaged in a standard P600 case size with a 5.7mm profile and a maximum current load capacity of 70A. This component is RoHS compliant, and can successfully survive transients up to 10x1kA 8/20μs.

The working principle of the MAP5KE70AE3 model is based on the avalanche breakdown of a specified PN junction voltage. Its avalanche effect helps to clamp the transient voltage above its specified breakdown voltage (VBR). The diode then diverts the harmful transient energy into the dedicated terminals (GND) and helps to suppress the voltage to protect the equipment, and only start working, when the voltage rises above its specified breakdown voltage (V(BR)).

In order to maximize the performance of the MAP5KE70AE3, it is important to carefully select series and parallel combinations of these components. The combination should minimize the pulse overlap time and reduce the chances of transistor failure due to overvoltage stress. The ability to tune the MAP5KE70AE3’s configuration helps protect the system from the worst transient surges.

The MAP5KE70AE3 is most effective in protecting against ESD, EFT and transients induced by switching off power supply. It is widely used in automotive electrical systems, telecommunications, and industrial and consumer electronics applications. It is also used in DC-DC switching regulators and other power circuits for protecting ICs, diodes, transistors, and other components from overvoltage damage.

The MAP5KE70AE3 is a cost-effective solution for protecting electronics from transient voltage surges. Its features include excellent clamping performance and extremely low leakage current. With an ultra-thin package, excellent temperature stability and a wide range of operation and junction temperatures, the device can provide reliable performance and protection in a wide range of automotive, industrial, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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