Allicdata Part #: | 1611-MAQ4123YME-CT-ND |
Manufacturer Part#: |
MAQ4123YME-TRVAO |
Price: | $ 0.99 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC MOSFET DVR 3A L-SIDE 8SOIC |
More Detail: | Low-Side Gate Driver IC Inverting 8-SOIC-EP |
DataSheet: | MAQ4123YME-TRVAO Datasheet/PDF |
Quantity: | 954 |
1 +: | $ 0.90720 |
10 +: | $ 0.81270 |
25 +: | $ 0.73080 |
100 +: | $ 0.66465 |
250 +: | $ 0.60165 |
500 +: | $ 0.53865 |
Series: | Automotive, AEC-Q100 |
Packaging: | Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
Driven Configuration: | Low-Side |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
Voltage - Supply: | 4.5 V ~ 20 V |
Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
Current - Peak Output (Source, Sink): | 3A, 3A |
Input Type: | Inverting |
Rise / Fall Time (Typ): | 11ns, 11ns |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Supplier Device Package: | 8-SOIC-EP |
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The MAQ4123YME-TRVAO is a Power Management Integrated Circuit (PMIC) particularly designed as a gate driver. Gate drivers are a type of integrated circuit used to control signals that help regulate and direct current throughout electronic systems. This type of IC is used in a variety of electronic systems, including those related to motor control, renewable energy, and information/communication technology. This article will discuss the application field, features, and workings of the MAQ4123YME-TRVAO.The MAQ4123YME-TRVAO gate driver is designed to drive high and low-side MOSFETs or IGBTs (insulated gate bipolar transistors), enabling consistent and reliable performance within typical operating frequencies of 300kHz to 500kHz. It utilizes bootstrap (floating supply) circuitry and independent control signals to facilitate the driving of multiple IGBTs in parallel. The IC also features integrated high current level shifters to help reduce switching losses, making it ideal for applications such as motor control, renewable energy, high-power LED lighting, power factor correction (PFC) stages, and more.The MAQ4123YME-TRVAO has a few key features that make it a desirable gate driver for various PMIC applications. It is available in a thermally-enhanced, low-profile 3 × 3.0mm MLP package, making installation and maintenance easier. It has an operating temperature range of -40 to +125 °C, making it suitable for both ambient and extreme temperature conditions. Additionally, it has integrated reverse current-protection circuitry, providing additional reliability and protection to the IC.The MAQ4123YME-TRVAO\'s working principle revolves around the activation and deactivation of the high and low switching elements, which are the high and low-side MOSFETs or IGBTs. It uses discrete MOSFETs or IGBTs in order to accurately control the switching element and meet the desired voltage and current thresholds. The gate driver IC then directs either a high or low voltage signal to the switching elements to turn them on or off. To initiate the switching sequence, a high frequency, low voltage signal is sent to the switching elements and they are then dynamically parameterized to the desired output voltage and current.The MAQ4123YME-TRVAO is a highly reliable and efficient PMIC gate driver which can be used in many different types of applications. It has a wide operating temperature range, excellent thermal performance, as well as reverse current-protection circuitry. Additionally, it can be used to drive multiple MOSFETs or IGBTs in parallel for higher current draw, making it ideal for motor control, renewable energy, high-power LED lighting, and PFC applications. Because of its ability to drive multiple switching elements and its integrated current protection, the MAQ4123YME-TRVAO is an excellent choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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