MAS3132EGL Allicdata Electronics
Allicdata Part #:

MAS3132EGLTR-ND

Manufacturer Part#:

MAS3132EGL

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE ARRAY 80V 100MA SSSMINI3
More Detail: Diode Array 1 Pair Common Cathode Standard 80V 100...
DataSheet: MAS3132EGL datasheetMAS3132EGL Datasheet/PDF
Quantity: 10000
10000 +: $ 0.09151
Stock 10000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2
Base Part Number: MAS3132
Description

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MAS3132EGL Application Field and Working Principle

MAS3132EGL diodes are widely used in rectifier, protection, power and other applications. This diode is a high-power Schottky diode developed by Microchip Technology in 2003. The diode has low power dissipation, reverse leakage current, ESD protection and high temperature stability.

Applications

MAS3132EGL diodes can be used in many applications, such as rectifier, protection, power and others. They are perfect for rectifying power supplies, DC-DC converters, battery chargers, SMPS, relays and various automotive, industrial and commercial applications. This diode can also be used in high-efficiency switched-mode operation, as well as in dc to dc converters.

Working Principle

The diode is basically a p-type material with a very thin n-type layer on the surface. This layer is very thin and has a very high tolerance to reverse current flow. When a voltage is applied to the diode, the electric field produced by the charge carriers creates a depletion zone which is expansive and creates an insulation between the two sides of the diode. The diode allows forward current of charge carriers to flow from the p-side to the n-side, creating a forward-bias voltage. The semiconductor material characteristics of the MAS3132EGL helps to keep a high-efficiency forward current flow and reduce any power wastage. The Schottky diode also provides a low reverse leakage current of charge carriers from the n-side to the p-side of the diode at no bias.

Advantages

MAS3132EGL diode offers some notable advantages, such as:

  • High power density and low power loss
  • Excellent ESD and high temperature protection
  • Low forward voltage and reverse current leakage
  • High reliability and long life time
  • Wide range of operating temperature (- 55° C to 125° C)

Conclusion

The MAS3132EGL diode from Microchip Technology is a perfect option for many rectifier, protection and power applications. The diode has excellent ESD protection, power dissipation, and temperature stability and is a reliable, long-lasting solution for use in high-power applications.

The specific data is subject to PDF, and the above content is for reference

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