MASMBJ45AE3 Allicdata Electronics
Allicdata Part #:

1086-5553-ND

Manufacturer Part#:

MASMBJ45AE3

Price: $ 3.93
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 72.7V DO214AA
More Detail: N/A
DataSheet: MASMBJ45AE3 datasheetMASMBJ45AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
180 +: $ 3.56409
Stock 1000Can Ship Immediately
$ 3.93
Specifications
Voltage - Clamping (Max) @ Ipp: 72.7V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 8.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MASMBJ45AE3 is a common transient voltage suppression (TVS) diode. It is designed for ESD, surge, and other over-voltage protection applications requiring very fast response levels to maintain system integrity. Its low profile SMB package is suitable for applications where space is limited, yet still superior in its cooling performance to similar packages. This diode is rated for operating temperatures up to 150°C junction temperature and has a zener breakdown voltage of 40V.Application Field. The MASMBJ45AE3 TVS diode is utilized in a wide range of consumer and industrial applications, such as cell phones, radios, satellite receivers, LCD displays, cell phone chargers, traffic warning systems, audio amplifiers, and automotive applications. Additionally, it is ideal for use in sensitive electronic equipment or where increased ESD and surge protection are required.Working Principle. The MASMBJ45AE3 TVS diode works on junction breakdown principle. When a voltage greater than the rated voltage is applied, a current flows through the junction. This current flow causes the junction to break down, creating a reverse bias blocking voltage and diverting the excess current away from the protected circuit. This diverting current creates a short-term surge which is discharged into the atmosphere. The reverse-biased voltage of the diode is closely related to the amount of over-voltage that is applied. As the over-voltage increases, the break-down voltage increases up until a certain point. At this point, the diode completely blocks the current from flowing into the protected circuit.Characteristics. The MASMBJ45AE3 TVS diode is typically used for ESD and prolonged surge protection. Its low profile SMB package provides superior thermal performance making it suitable for applications that require increased space due to size constraints. Its low capacitance of 6pF prevents signal degradation while its very low on-state resistance ensures fast response. The diode is capable of handling up to 40V peak pulse voltages and has a maximum peak pulse power rating of 400W. Conclusion. The MASMBJ45AE3 TVS diode is a versatile device which can be used in a wide range of consumer and industrial applications. It provides superior thermal performance and low capacitance to ensure that signals are not degraded. Its fast response and high peak pulse ratings make it ideal for applications where fast response times and surge protection are required. The diode is cost-effective and provides reliable protection against ESD and other over-voltage events.

The specific data is subject to PDF, and the above content is for reference

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