MASMLJ51A Allicdata Electronics
Allicdata Part #:

1086-6500-ND

Manufacturer Part#:

MASMLJ51A

Price: $ 5.78
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 51V 82.4V DO214AB
More Detail: N/A
DataSheet: MASMLJ51A datasheetMASMLJ51A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
122 +: $ 5.25642
Stock 1000Can Ship Immediately
$ 5.78
Specifications
Voltage - Clamping (Max) @ Ipp: 82.4V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 36.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 56.7V
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MASMLJ51A is one of the most popular TVS-Diodes (Transient Voltage Suppressor Diodes) used in high power circuits. It is used to protect sensitive electronic circuits from electrical spikes. It is designed for applications in the consumer electronics, vehicle electronics and industrial power supplies sectors.

The MASMLJ51A diode has a chassis-type lead-frame construction and a symmetrical connection. It is made up of a pair of anode and cathode terminals and is housed in a small square package. The anode terminal is connected to the main power grid while the cathode terminal is connected to the circuit ground. This configuration allows the diode to easily dissipate electrical energy and maintain the circuit integrity.

The MASMLJ51A diode is rated up to 50V and consumes a maximum of 4A current. The operating temperature can range from -55C to +125C. When the diode is operated within its rated voltage and current conditions, it can absorb up to 900W of energy in case of an electrical surge. This makes it suitable for high-power applications.

The internal structure of the MASMLJ51A diode consists of a ceramic substrate dielectric layer and a silicon avalanche layer. The silicon avalanche layer acts as a Zener diode which helps in dissipating any excessive electrical energy which may otherwise cause damage to the circuit. When the applied voltage exceeds the breakdown voltage of the avalanche layer, it releases the excess energy in the form of heat.

The operation of the MASMLJ51A diode is quite simple. It works on the principle of reverse breakdown. When the reverse voltage or current goes above the rated value, a breakdown occurs and the diode quickly dissipates the excess energy by releasing it in the form of heat. This helps protect the circuit from any damage.

The MASMLJ51A diode is a popular choice for many applications in the consumer electronics, vehicle electronics and industrial power supplies. It is also widely used in medical equipment, LED lighting, power supplies, security systems and many other applications. The diode is reliable, easy to install and cost-effective. It can provide robust protection from transient spikes and ensure safe operation of the electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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