Allicdata Part #: | MAX12005ETM+T-ND |
Manufacturer Part#: |
MAX12005ETM+T |
Price: | $ 8.71 |
Product Category: | RF/IF and RFID |
Manufacturer: | Maxim Integrated |
Short Description: | IC SATELLITE IF SWITCH 48-TQFN |
More Detail: | RF Switch IC DBS, L-Band, IF Satellite 2.15GHz 75... |
DataSheet: | MAX12005ETM+T Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 7.91196 |
Specifications
Test Frequency: | 950MHz |
Supplier Device Package: | 48-TQFN (7x7) |
Package / Case: | 48-WFQFN Exposed Pad |
Operating Temperature: | -40°C ~ 85°C |
Voltage - Supply: | 3 V ~ 3.5 V |
Impedance: | 75 Ohm |
Features: | -- |
IIP3: | -- |
P1dB: | -- |
Series: | -- |
Insertion Loss: | -- |
Isolation: | 55dB |
Frequency Range: | 950MHz ~ 2.15GHz |
Circuit: | -- |
Topology: | Reflective |
RF Type: | DBS, L-Band, IF Satellite |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF Switches
A Radio Frequency (RF) switch is an electronic device used to switch between two or more electrical circuits. It is widely used in different fields of radio applications. The MAX12005ETM+T is a RF switch which is widely used due to its excellent performance in RF circuit applications.Application Field
The MAX12005ETM+T is an RF switch which is ideal for RF applications such as cellular, W-CDMA, and WiMAX applications. It is also suitable for other RF applications such as satellite TV, military and aerospace applications. Its features make it an ideal choice for a variety of RF applications.The main features of the MAX12005ETM+T include excellent linearity, low insertion loss, wide operating bandwidth, and low switching current. Additionally, it is highly reliable, making it suitable for use in harsh environments.Working Principle
The MAX12005ETM+T is an RF switch which works based on the CMOS process. This process is used for the fabrication of semiconductors. It involves different layers of polysilicon which are formed on a CMOS oxide substrate. The basic working principle of the MAX12005ETM+T is based on the CMOS process. The polysilicon is divided into two parts, one part is the drain, while the other part is the source. The source is connected to the drain via a PMOS transistor. The PMOS transistor acts as a switch which can be turned on or off depending on the voltage applied to it.When the switch is turned on, the source is connected to the drain and the current flows through the PMOS transistor and the source. When the switch is turned off, the current does not flow through the PMOS transistor and the source. This is the basic principle of operation of the MAX12005ETM+T RF switch.Conclusion
The MAX12005ETM+T is an excellent RF switch which is used for a variety of RF applications. It is ideal for applications such as cellular, W-CDMA, and WiMAX applications. Additionally, its features make it an ideal choice for a variety of RF applications. The main features of the MAX12005ETM+T include excellent linearity, low insertion loss, wide operating bandwidth, and low switching current. Its working principle is based on the CMOS process and it involves a PMOS transistor which acts as a switch.
The specific data is subject to PDF, and the above content is for reference
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