Allicdata Part #: | MAX14695DEMBD#-ND |
Manufacturer Part#: |
MAX14695DEMBD# |
Price: | $ 0.00 |
Product Category: | Development Boards, Kits, Programmers |
Manufacturer: | Maxim Integrated |
Short Description: | BOARD EMB 6CH HS SDIO LL XLATOR |
More Detail: | MAX14695 Evaluation Board |
DataSheet: | MAX14695DEMBD# Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Type: | -- |
Function: | -- |
Embedded: | -- |
Utilized IC / Part: | MAX14695 |
Primary Attributes: | -- |
Supplied Contents: | Board(s) |
Secondary Attributes: | -- |
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Evaluation and Demonstration Boards and Kits serve as an important tool for development engineers, providing the means to quickly assess and demonstrate the capabilities of a given integrated circuit or system of circuits. MAX14695DEMBD# is a particularly useful example of such a board, allowing easy evaluation of the performance of N-Channel Trench MO-SFET transistors. This article will discuss the application field and working principle of MAX14695DEMBD#.
MAX14695DEMBD# is designed to drive N-Channel Trench MO-SFET transistors in a wide variety of applications. It is suitable for direct drive, half-bridge or full bridge configurations, and includes two gate drivers, upper stored gate voltage, lower stored gate voltage, GDS drive stages, gate thresholds, and a high precision reference voltage. The board is designed to optimize efficiency for the driving of Trench MO-SFET transistors in applications such as active filter circuits, high-end audio amplifiers, multi-channel amplifier systems, and Class-D audio amplifiers. The board also includes the necessary circuitry for testing of the Trench MO-SFET transistors, enabling engineers to quickly evaluate the performance of their product in the development stage.
The working principle of MAX14695DEMBD# is based on the SGTC (Source Gate Transistor Charge) theory, which is based on the charging of the source and gate electrodes of the transistors. As the voltage potential is increased, the electrons will tend to flow to the source and gate electrodes of the transistor. As the electrons accumulate, the drain-source current will increase until saturation is achieved. At this point, the device will be in an active state and can be driven in a predictable manner. This is the working principle of the MAX14695DEMBD# board, and is used to drive the N-Channel Trench MO-SFET transistors in the desired application.
In conclusion, MAX14695DEMBD# is a valuable tool for the evaluation and demonstration of N-channel trench MO-SFET transistors. It has the capability to simulate a wide variety of operating conditions, making it ideal for product development and testing. Its working principle is based on the SGTC theory which enables the device to reach saturation quickly and provide a reliable performance. Overall, MAX14695DEMBD# is a powerful tool for product development engineers which can help to optimize their products.
The specific data is subject to PDF, and the above content is for reference
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