MAZ40430MF Allicdata Electronics

MAZ40430MF Discrete Semiconductor Products

Allicdata Part #:

MAZ40430MFTB-ND

Manufacturer Part#:

MAZ40430MF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE ZENER 4.3V 370MW DO34
More Detail: Zener Diode 4.3V 370mW ±7% Through Hole DO34-A2
DataSheet: MAZ40430MF datasheetMAZ40430MF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±7%
Power - Max: 370mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO34-A2
Base Part Number: MAZ404V3
Description

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Introduction to MAZ40430MF

MAZ40430MF, also known as Zener Single Diode, is a power semiconductor device that is commonly used in signal processing applications. It is made from an amorphous silicon layer with a thin layer of intrinsic material. A p-type substrate is added for the anode current. It is an epitaxial planar type semiconductor device.

MAZ40430MF Application Field

The MAZ40430MF is generally used in signal processing applications, such as audio amplifiers, radio receivers, television sets, radio transmitters, and cellular phones. It is also used in cars, various electronic equipment and electronic systems. It is mainly used as a rectifier or protection diode to prevent reverse currents or to limit overvoltage conditions. However, the MAZ40430MF can also be used in applications such as voltage sensing and voltage levelers, where it enables effective current control and voltage limiting.

MAZ40430MF Working Principle

The MAZ40430MF is a semiconductor device that uses a combination of a p-type and a n-type material to control the voltage or current running through the device. In a MAZ40430MF diode, a p-type material forms the anode and a n-type material forms the cathode. The p-type material has a higher number of electrons, while the n-type material has a lower number. When the MAZ40430MF diode is forward biased (positive voltage applied to anode and negative voltage applied to cathode), it allows a forward current flow from the anode to the cathode. In reverse biased mode, the diode does not allow any current flow. The MAZ40430MF diode is also an important component of Zenar networks. Zenar networks are electronic components which consist of multiple connected diodes that are designed to limit or regulate the voltage running through them. In the case of a Zenar network, the multiple connected MAZ40430MF diodes form a voltage divider. The voltage divider divides the input voltage into multiple outputs of lower voltage. The MAZ40430MF diodes control the voltage as it passes through the network.

Conclusion

In conclusion, the MAZ40430MF diode is a single diode device that is used in signal processing applications and in Zenar Networks. It is made from an amorphous silicon layer and has a p-type substrate for anode current. It can act as a rectifier, a voltage-leveler, or a protection device. It is also used in Zenar networks to regulate and limit the voltage running through the network.

The specific data is subject to PDF, and the above content is for reference

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