MAZ40430MF Discrete Semiconductor Products |
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Allicdata Part #: | MAZ40430MFTB-ND |
Manufacturer Part#: |
MAZ40430MF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | DIODE ZENER 4.3V 370MW DO34 |
More Detail: | Zener Diode 4.3V 370mW ±7% Through Hole DO34-A2 |
DataSheet: | MAZ40430MF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 4.3V |
Tolerance: | ±7% |
Power - Max: | 370mW |
Impedance (Max) (Zzt): | 100 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AG, DO-34, Axial |
Supplier Device Package: | DO34-A2 |
Base Part Number: | MAZ404V3 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction to MAZ40430MF
MAZ40430MF, also known as Zener Single Diode, is a power semiconductor device that is commonly used in signal processing applications. It is made from an amorphous silicon layer with a thin layer of intrinsic material. A p-type substrate is added for the anode current. It is an epitaxial planar type semiconductor device.MAZ40430MF Application Field
The MAZ40430MF is generally used in signal processing applications, such as audio amplifiers, radio receivers, television sets, radio transmitters, and cellular phones. It is also used in cars, various electronic equipment and electronic systems. It is mainly used as a rectifier or protection diode to prevent reverse currents or to limit overvoltage conditions. However, the MAZ40430MF can also be used in applications such as voltage sensing and voltage levelers, where it enables effective current control and voltage limiting.MAZ40430MF Working Principle
The MAZ40430MF is a semiconductor device that uses a combination of a p-type and a n-type material to control the voltage or current running through the device. In a MAZ40430MF diode, a p-type material forms the anode and a n-type material forms the cathode. The p-type material has a higher number of electrons, while the n-type material has a lower number. When the MAZ40430MF diode is forward biased (positive voltage applied to anode and negative voltage applied to cathode), it allows a forward current flow from the anode to the cathode. In reverse biased mode, the diode does not allow any current flow. The MAZ40430MF diode is also an important component of Zenar networks. Zenar networks are electronic components which consist of multiple connected diodes that are designed to limit or regulate the voltage running through them. In the case of a Zenar network, the multiple connected MAZ40430MF diodes form a voltage divider. The voltage divider divides the input voltage into multiple outputs of lower voltage. The MAZ40430MF diodes control the voltage as it passes through the network.Conclusion
In conclusion, the MAZ40430MF diode is a single diode device that is used in signal processing applications and in Zenar Networks. It is made from an amorphous silicon layer and has a p-type substrate for anode current. It can act as a rectifier, a voltage-leveler, or a protection device. It is also used in Zenar networks to regulate and limit the voltage running through the network.The specific data is subject to PDF, and the above content is for reference
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