MAZ408200F Discrete Semiconductor Products |
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Allicdata Part #: | MAZ408200FTB-ND |
Manufacturer Part#: |
MAZ408200F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | DIODE ZENER 8.2V 370MW DO34 |
More Detail: | Zener Diode 8.2V 370mW ±6% Through Hole DO34-A2 |
DataSheet: | MAZ408200F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 8.2V |
Tolerance: | ±6% |
Power - Max: | 370mW |
Impedance (Max) (Zzt): | 15 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 5V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AG, DO-34, Axial |
Supplier Device Package: | DO34-A2 |
Base Part Number: | MAZ408V2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MAZ408200F can be categorized as a single Zener diode, and it is used in a variety of settings where a highly stable and consistent reference voltage is needed. It is most often used in power regulation circuits, such as in power supply designs, as well as in overvoltage/reverse voltage protection applications, voltage clamping and clipping, as well as in other applications that require precise reference voltages.
The MAZ408200F is a unique single Zener diode that features an integrated Zener diode, a clamping device, and a protect-type diode in one circuit. This allows the diode to prevent excessive current flow through the circuit and it also helps to maintain a stable reference voltage. The MAZ408200F also features an internal reverse connection protection, which ensures that only a predetermined current will flow through the circuit, making it ideal for power regulation applications.
The MAZ408200F uses a P-N junction to provide the necessary voltages and current levels. This junction is manipulated by reverse biasing the P-N junction with a specific voltage, which allows for higher levels of current to flow. This structure allows for precise voltage and current levels to be controlled, and it also allows for the diode to respond quickly to changes in the circuit.
The MAZ408200F also features a high-energy breakdown voltage, which means that it can maintain its voltage regulation even when a higher voltage is applied to the circuit. This makes it ideal for applications where failure or breakdown can cause catastrophic damage or losses. In addition, the MAZ408200F feature a low current leakage, which means that it can provide consistent voltage levels without consuming a large amount of power.
The MAZ408200F is a great choice for many different applications, including those that require precise voltage regulation, efficient power management, and reliable circuit performance. Its high breakdown voltage, low leakage current, and integrated components make it ideal for use in many different settings. Additionally, its integrated components also make it easier to use and configure, making it a popular choice for many engineers.
The specific data is subject to PDF, and the above content is for reference
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