MBC13900T1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6.5V
Frequency - Transition:	15GHz
Noise Figure (dB Typ @ f):	0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain:	15dB ~ 22dB
Power - Max:	188mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 2V
Current - Collector (Ic) (Max):	20mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	SOT-343
Base Part Number:	MBC13900

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The MBC13900T1 transistor is a bipolar junction transistor specifically designed for use in radio frequency (RF) applications such as transmitters and receivers. The device is made with a composite substrate structure and has a unique design that makes it suitable for both high-speed and low-noise operation.

The device has a bipolar transistor core which is composed of two p-type and two n-type semiconductor layers. The two p-type layers are mainly designed for controlling the current flow, while the two n-type layers are primarily used for controlling the voltage. The device also has a collector, base, and emitter which is used for amplifying signals and controlling the current and voltage flow. The three contact points are connected to the respective terminal through bonding wires.

The MBC13900T1 is designed for high-speed operation, as it has a high gain bandwidth and a fast response time. It also has a low power consumption and a low noise figure, making it suitable for applications where noise must be kept to a minimum. The device also has a high avalanche breakdown voltage and high collector-base breakdown voltage, making it capable of handling high voltage applications. Finally, the device has a high thermal resistance, making it suitable for use in a wide range of temperatures.

In terms of its application field, the MBC13900T1 is mainly used in RF applications such as cell phones, radio transmitters and receivers, base-stations, and radio transceivers. The device is often used to amplify small signals, allowing them to be detected across large distances. The device is also used in low-noise applications, such as receivers where noise must be kept to the minimum to ensure clear communication.

The working principle of the MBC13900T1 is based on bipolar junction technology. When a positive voltage is applied between the collector and the base, a current is created that travels through the base and the collector. This current then passes through the emitter, which results in a voltage drop across the base-emitter junction. This voltage drop allows the current to be modulated, which in turn results in the amplification of signals.

This process allows the device to amplify small signals across large distances, making it ideal for use in radio frequency applications. As the device has a high gain bandwidth, it is also capable of quick response time, meaning signals can be detected rapidly even when they are travelling across long distances. Additionally, the device is capable of low power consumption and low noise, making it suitable for applications where noise must be kept to a minimum. Finally, the device has a high thermal resistance, making it suitable for use in a wide range of temperatures.

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