MBC13720NT1 Allicdata Electronics

MBC13720NT1 RF/IF and RFID

Allicdata Part #:

MBC13720NT1TR-ND

Manufacturer Part#:

MBC13720NT1

Price: $ 0.53
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: IC AMP 2.4GHZ W/BYPASS SOT-363
More Detail: RF Amplifier IC General Purpose 2.4GHz SOT-363
DataSheet: MBC13720NT1 datasheetMBC13720NT1 Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.47246
6000 +: $ 0.45496
Stock 3000Can Ship Immediately
$ 0.53
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
Frequency: 2.4GHz
P1dB: 6dBm
Gain: 12dB
Noise Figure: 1.55dB
RF Type: General Purpose
Voltage - Supply: 3.3V
Current - Supply: 5mA
Test Frequency: 2.4GHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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RF amplifiers are electronic amplifiers, specializing in the amplification of analog signals at radio frequencies (RF). They are essential components in most RF applications, as they can be used to amplify Zigbee, Wi-Fi, GSM, 3G, 4G and other radio transmission signals. MBC13720NT1 is a high-performance low-noise RF amplifier, developed by Murata Manufacturing with high input and output power. Its application field and working principle is introduced here below.

Application Field

MBC13720NT1 can be widely used in both commercial and military applications. It is mainly applied in the wireless amplifiers/repeaters of various wireless communication system, such as UHF/VHF radio, wireless cell phone, television, navigation communication and so on. Also, its high input and output power can help to reduce the number of amplifiers in use and increase system gain simultaneously.

Working Principles

This Low Noise Amplifier (LNA) comprises of two major stages, an ELFET amplifier stage and a GaN driver transistor. The ELFET amplifier stage exhibits extremely low noise figure and moderate gain. It employs CMOS-integrated inductors to reduce undesirable reactive elements and eliminate the need for external components. The pre-gain stage is designed to increase the gain and power in the later stages, while still maintaining a low noise figure. The GaN driver transistor provides the needed energy to amplify weak signals while still maintaining a high level of linearity. The input match of MBC13720NT1 is designed for a level of efficiency that optimizes the input and output power characteristics.

The LNA offers several unique features, such as the optimized circuit topology that allows it to operate over an extended signal range, with a low noise figure and high linearity. The combination of high input and output power makes it ideal for use in wireless communication applications. Additionally, the LNA can operate at frequencies up to 10 GHz.

Aside from its excellent performance, the MBC13720NT1 also offers low power consumption. It can be powered with a power consumption of only 0.1 W, making it ideal for battery powered applications. It also combines excellent thermal stability and high power-added efficiency without the need for additional heat sinks or other accessories.

The MBC13720NT1 is a low-noise RF amplifier that combines power efficiency, linearity, and increased gain in a flexible and cost-effective package. It is suitable for a wide range of applications, and it is essential for most modern RF systems and wireless communication systems. The combination of high input and output power, low noise figure, and linearity makes it the ideal choice for use in these demanding markets.

The specific data is subject to PDF, and the above content is for reference

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