Allicdata Part #: | 1242-1133-ND |
Manufacturer Part#: |
MBR200100CTS |
Price: | $ 36.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE MODULE 100V 200A SOT227 |
More Detail: | Diode Array 2 Independent Schottky 100V 200A (DC) ... |
DataSheet: | MBR200100CTS Datasheet/PDF |
Quantity: | 20 |
1 +: | $ 33.08130 |
10 +: | $ 30.93300 |
100 +: | $ 26.82060 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 2 Independent |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 100A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 80V |
Operating Temperature - Junction: | -40°C ~ 175°C |
Mounting Type: | Screw Mount |
Package / Case: | SOT-227-4 |
Supplier Device Package: | SOT-227 |
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The MBR200100CTS Diode is a device that belongs to the Diode - Rectifier - Arrays category. It is a small, single package device that is used to provide superior power devices in a variety of applications. Its compact design makes it an economical alternative to larger, expensive devices.
The MBR200100CTS Diode is a primary component of power supply systems. Its simple design enables it to perform a wide range of power regulatory tasks, including rectification of AC to DC and inversion of DC voltage. It is also used in DC-DC converters, DC-AC inverters, solar cell applications, and other devices requiring high efficiency conversion of power.
The primary application field for the MBR200100CTS Diode is in automotive energy systems, where it is used to regulate power flow by providing high current switching action with low levels of power dissipation. It is also used in high reliability industrial and aerospace applications to improve reliability and operation of electronic systems. It is well suited for high power applications such as power supply rectification, motor control, and energy storage systems.
The working principle of the MBR200100CTS Diode is based on the use of a reversely biased junction between two semiconductor rectifier elements. When a forward bias voltage is applied, the diode turns on and transfers current across the junction. The device has a built-in reverse breakdown voltage, which prevents it from being destroyed due to high current overloading. This allows the device to remain functional during long current spikes.
In order to reduce the forward voltage drop, the MBR200100CTS Diode is equipped with an emitter gate. This gate is connected to a control circuit, which allows the device to be controlled by the input signal. This enables the device to switch on and off quickly, while still providing superior switching performance.
The MBR200100CTS Diode is designed to provide a maximum power dissipation of 200 Watts, making it suitable for use in a variety of High Power supply applications. It is capable of handling up to 100A of current, allowing it to be used in more demanding applications. The device has a low-junction temperature of 95° C and is rated for a temperature range of -40°C to +150°C, making it suitable for use in a wide range of environmental conditions.
In summary, the MBR200100CTS Diode is an economical and reliable power device that is well suited for a variety of industrial, automotive and aerospace applications. With its simple design, low power dissipation and high reliability, it is the perfect choice for applications that require efficient, high power solutions.
The specific data is subject to PDF, and the above content is for reference
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