MBR2090CTG

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Diodes - Rectifiers - Arrays are commonly used with applications such as high power density everyday appliances, industrial and automotive. The MBR2090CTG MOSFET rectifier diode is an excellent choice for its type due to the fact that it is designed to have higher power efficiency and performance in comparison to other rectifier diodes.

The MBR2090CTG is a diode array module containing two MOSFET rectifier diodes connected in series to provide a reverse-blocking voltage of 20V. The junction temperature of the MBR2090CTG is specified to be up to 175 degrees Celsius, and a reverse surge current of up to 25 Amps. The breakdown voltages for this MOSFET rectifier diode are 60V for the first diode and 20V for the second diode, allowing for a wide range of applications with high power density.

The MBR2090CTG has an ultra-low forward voltage of 0.5 volts, giving it a dramatic 30 percent reduction in power loss compared to other rectifier diodes. This high efficiency factor allows the MBR2090CTG to be used in applications where high levels of power are needed.

The MBR2090CTG’s reverse breakdown voltage ensures n-channel MOSFET is used with very low on-state resistance. This allows the MBR2090CTG to have an excellent ability to handle high surge current, providing an effective solution for applications such as uninterruptible power supplies (UPSs), motor drives and high power converters.

This MOSFET rectifier diode works on the principle of creating a short-circuit when a voltage is applied across it, called a Forward Voltage Breakdown (FVB). When this breakdown occurs, the MBR2090CTG’s integrated transistor switches on and the electric charge created by the FVB provides the necessary conduction for the diode array module. This conduction provides high switching performance and higher power efficiency in comparison to other rectifier diodes.

Due to the excellent performance and efficiency of the MBR2090CTG, this device is well suited for applications requiring high power density, such as automotive, industrial, fuel cells and high power household appliances. The ultra-low forward voltage, the reverse blocking and breakdown voltage and the integrated transistor makes the MBR2090CTG an excellent choice for those applications requiring high power levels.

The MBR2090CTG is a reliable and efficient choice for applications involving high current, high power density and reverse blocking. The integrated transistor adds pump-ability to the module and helps extend the life of the device. Additionally, the ultra-low forward voltage and excellent switching performance ensures a maximum level of performance for the MBR2090CTG diode array module.

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