MBR2035PTHC0G

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The MBR2035PTHC0G is a type of diode array designed to rectify high voltage, high current and medium speed applications. It has a forward voltage drop of approximately 4.2 V, a maximum reverse voltage of 30 V and a reverse leakage current of 5.0 mA. It is composed of three monolithic parallel diodes, each with its own integrated gate-to-source capacitance, gate resistance and drain-to-source capacitance. Each diode in the array has a temperature coefficient of -2mV/°C and a maximum operating temperature of 175°C. The device is housed in a power thermally enhanced MSOP-8 package.

The MBR2035PTHC0G is intended to replace three individual diodes and thus can be used in applications that require parallel diodes. It has applications in inductive and capacitive power supplies, high-speed switching power supplies, DC-DC converters, voltage regulator circuits, EMI filters and various lighting applications. The MBR2035PTHC0G can also be used in circuits requiring advanced level-shifting, rectification, protection against overvoltage and electrostatic discharge protection.

The working principle of the MBR2035PTHC0G is based on a diode’s basic function of rectifying the sinusoidal AC input particularly by allowing only current to flow in the desired direction. In the case of the MBR2035PTHC0G, the diode array is structurally composed of three individual diode chips with a common cathode. These diodes are connected in parallel, allowing the device to act as a single diode with an increased forward current rating. When a positive voltage is applied to the anode, the diode array is forward biased and current will flow in the forward direction between the anode and cathode.

Inside the device, a gate-to-source capacitance is used. When a voltage source is connected to the anode, a current flows through the gate-to-source capacitance which charges the gate. This charge creates an electric field which prevents current flow in the reverse direction. Additionally, a gate resistor is implemented in the device to limit the current through the gate-to-source capacitance. The diode array also incorporates a drain-to-source capacitance which helps protect the device from high-speed switching transients, allowing the device to be used in certain applications such as high-speed switch-mode power supplies.

The MBR2035PTHC0G is a unique device which combines the advantages of parallel diodes with an integrated gate-to-source capacitance, gate resistor and drain-to-source capacitance. The device is housed in a power thermally enhanced MSOP-8 package and intended to replace three individual diodes in various high voltage, high current and medium speed applications. By rectifying the sinusoidal AC input, the MBR2035PTHC0G can be used in power supplies, DC-DC converters, EMI filters and various lighting applications.

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