MBR2535CTHC0G Allicdata Electronics
Allicdata Part #:

MBR2535CTHC0G-ND

Manufacturer Part#:

MBR2535CTHC0G

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ARRAY SCHOTTKY 35V TO220AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 35V 25A...
DataSheet: MBR2535CTHC0G datasheetMBR2535CTHC0G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.30376
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 25A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 25A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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Application Field and Working Principle of MBR2535CTHC0G

The MBR2535CTHC0G is a silicon rectifier mask-arrays and is one of the many diodes in the rectifier line from ON Semiconductor. It is extremely small in size and has a wide variety of applications in various industries.

Rectifiers

Rectifiers are electronic semiconductor devices that are typically used to turn AC voltage (alternating current) into DC voltage (direct current). They can be used as a component in a power supply or other applications. A rectifier is typically made up of a diode or an array of diodes, depending on the characteristics desired.

MBR2535CTHC0G

The MBR2535CTHC0G is an array of Schottky barrier diode rectifiers enclosed in a dual-in-line surface mount package. It has extremely low forward voltage drop and low power loss for applications that require tight control over current and power dissipation. It is ideal for power supplies, automotive ignition circuits, and other applications prone to high surge voltages. The package includes two diodes with three terminal pins in a single configuration.

Working Principle

The Design is based around a single-phase Silicon Schottky barrier diode array that contains 2 p-n junction diodes. The junctions are designed to suspend the reverse voltage flow in one direction, allowing only current to flow in the opposite direction. This works by a bias voltage formed due to the difference in built in potential between the junction of the n-type and p-type semiconductor. The Schottky diodes have a low forward voltage drop, allowing them to have better efficiency over traditional PN- junction diode architecture.

When alternating current is applied to the diode array, it acts as a one-way gate so that only the positive half of the waveform is allowed to pass, effectively creating a Uniform Wave pumping out the full positive energy of the waveform. The MBR2535CTHC0G also provides low power loss, meaning more power is kept in the positive half of the waveform even during high surge volts.

Applications

The MBR2535CTHC0G rectifier mask-array is ideally suited for applications such as automobile electronics, such as for testing and replacing spark plugs, as well as for manufacturing on-board automotive charging systems and fuel injection systems. It is also used in motorcycle electronics and can be found in brake and headlight circuits, as well as in solenoids, heater coils and anti-lock brake systems. Finally, this rectifier is also used in power supplies and in electric circuits that require quick switching of high currents.

Conclusion

The MBR2535CTHC0G is an extremely small, efficient and effective rectifier mask-array with a wide variety of uses in multiple industries. The low forward voltage drop and low power loss achieved with Schottky diode technology make this rectifier a great choice for current and power control applications.

The specific data is subject to PDF, and the above content is for reference

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