MBR3035WT

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The MBR3035WT is a popular diode rectifier array designed for use in high-power applications. It is a 30 A, 35 V, at 140ºC temperature rating, fully isolated, dual common cathode, SR3-style package, with an anode-to-cathode voltage rating of +100 V. The unique feature of this device is its low-profile, thermally efficient architecture, which enables it to work at high levels of power while also preserving micro-junction efficiencies.

The MBR3035WT has multiple applications in high power applications, particularly in the fields of automotive, industrial and telecommunication. In automotive applications, the MBR3035WT is used as a standard rectifier in power modules, inverters and switch mode power supplies. It is also widely used in industrial applications, where it is often used to bridge AC or DC current paths. In telecommunication applications, the device is often employed as a voltage regulator.

In terms of technology, the MBR3035WT is based on a dielectric isolation technology, where individual chips are separated from one another and contact each other through dielectric connection, rather than relying on metallic contact. This ensures a higher level of isolation between individual rectifier elements, as well as an improved level of thermal conduction. In addition, the device is equipped with an integrated heat sink, which helps to dissipate heat generated by the large currents that flow through it.

In terms of functionality, the MBR3035WT offers a parallel maximum forward voltage drop of 1.1 V, and a reverse leakage current of 10 μA at 25°C. It also has a maximum ripple voltage of 2% of the DC voltage at full load as well as an average forward current of 25 A at TJ=120°C. Furthermore, it has an extremely low junction capacitance of 0.9 pF and an operating temperature range of -55°C to +150°C.

In terms of working principle, the MBR3035WT behaves like any conventional diode. When the device is forward-biased, the electrons that enter its outer p-type region are pushed away from the negative terminal and toward the positive terminal, creating a high-intensity electric field between the terminals. This electric field causes sufficient electrons to travel from the p- to the n-type region and back, creating a flow of electric current.

When the device is reverse-biased, the electrons in the n-type region are repelled from the positive terminal, and the electrons in the p-type are pushed away from the negative terminal. This creates a barrier between both terminals that does not allow further electron flow, thus precluding electric current from flowing.

The MBR3035WT is a high performance rectifier array designed for a wide range of applications. Its impedance behavior and small dielectric isolation make it suitable for use as a standard rectifier or voltage regulator in automotive, industrial, and telecommunication applications. In addition, its integrated heat sink, parallel maximum forward voltage drop and reverse leakage current of 10 μA make it extremely efficient in handling large currents. All in all, the MBR3035WT is an ideal solution for high power applications.

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