MBR3520R

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MBR3520R Application Field and Working Principle

MBR3520R is a single rectifier diode designed and manufactured by ON Semiconductor. It is a high speed switching diode, capable of operating in a working voltage range of 200V to 350V and currents up to 35A. It is suitable for use in rectifier and switching applications, for both industrial and automotive applications.

Applications

MBR3520R is a suitable choice for applications that require high current handling capability in a higher voltage environment. It can be used in high voltage power electronics applications, solar panel systems, automotive battery charging systems and in motor drives. It is also used in Rectifier Bridge applications in power supply systems, power line harmonics filters and ultra-high speed, high frequency switching and control applications.

Features and Benefits

The MBR3520R offers several features and benefits to users, such as low forward voltage drop, high frequency operation and high temperature operation. It is designed with an optimized structure and a built-in temperature sensor. This ensures a good balance between performance, reliability, thermal performance and efficiency.

It also has high surge current ratings and low reverse leakage current. This makes it a reliable and cost-effective solution for power electronics applications. The device is also designed to be RoHS-compliant.

Working Principle

The MBR3520R is a single rectifier diode that works based on the principle of the P-N junction. It has an anode and cathode, separated by a P-N junction. When the current flow is reversed, the junction is breakdown. When the current flow is reversed, the diode forward biases, allowing current to flow through the anode to the cathode. The forward voltage drop of the diode is a result of the built-in temperature sensor. This ensures that the device always operates at optimum temperatures.

The MBR3520R is constructed using a combination of oxide passivation, silicon substrate and mounting base. The oxide passivation provides a protective layer to the device, preventing leakage, while the silicon substrate provides good thermal management. The mounting base has two terminals: an anode and cathode, connecting to the device to provide electrical connectivity.

Conclusion

The MBR3520R is a single rectifier diode suitable for use in high voltage, high frequency and high temperature applications. It is designed with an optimized structure and built-in temperature sensor, providing a good balance between performance, reliability, thermal performance and efficiency. It offers low forward voltage drop, high surge current ratings and low reverse leakage current, making it a reliable and cost-effective solution for power electronics applications.

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