MBR3060CT

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	60V
Current - Average Rectified (Io) (per Diode):	--
Voltage - Forward (Vf) (Max) @ If:	770mV @ 15A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	5mA @ 60V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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MBR3060CT Application Field and Working Principle

Introduction

The diode array MBR3060CT is a rectifier bridge assemblies consist of four independent Schottky barrier rectifiers with 16A current rating. This economical and compact package designed for power supply or other power switching applications favored in commercial or industrial applications. It is based on the Schottky barrier rectifier principle, thus enabling the device to operate with a higher efficiency than other traditional rectifier bridges properties including reverse Polarity and voltage protection, high efficiency, and low leakage current.

Application

MBR3060CT diode array has a variety of applications, such as electroplating rectification, DC power supplies, electronic stabilizers, UPSs, solar energy, motors, electrical machinery, and other power electronic equipment, as well as other general purpose, and specifically as a protection component against reverse voltage and short circuit, a high diode array 1nV, reverse withstand voltage VRRM of 50V and 4A actual average current capacity I (AV) with a wide working frequency range of up to 200kHz, allowing the device to be used in applications where high frequency, charge and power conversion is required.

Features

The MBR3060CT have a variety of different features, allowing them to be used in a wide range of applications and providing a variety of different solutions. The most notable features they boast of include high diode 1nV, reverse withstand voltage VRRM of 50V and 4A actual average current capacity I (AV), a wide working frequency range of up to 200kHz and (-) tolerance body temperature range from -55 to +125C. This allows the device to be used in high temperature and low temperature environments, as well as for power supplies, electronic stabilizers and other power electronic equipment.

Working Principle

The working principle of the MBR3060CT relies on both the breakdown and the avalanche characteristics of its compact design. The avalanche regions of the device are found in the active area of its curve and is used for rectification where breakdown voltage does not exceed values of 50V and 4A total current. The operating principle of the device involves a high frequency signal of up to 200kHz that passes through the anode of the diode array and is then rectified by the cathode, creating a signal of electrons. By this signal, the forward breakdown voltage, the electron concentration, and the resistivity of the device are all taken into account when determining the most efficient operation of the diode array.

Conclusion

In conclusion, the MBR3060CT diode array is an ideal choice for many different applications that require a wide working frequency range of up to 200kHz and a high voltage reverse voltage current of 4A. Its ability to withstand higher temperatures and low temperatures and its low leakage current makes it a popular choice for its power management and power conversion capabilities. Finally, due to its avalanche and reverse breakdown characteristics, MBR3060CT can provide an efficient and reliable rectifier for any power supply and electronic stabilizer application.

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