| Allicdata Part #: | MBR35100RGN-ND |
| Manufacturer Part#: |
MBR35100R |
| Price: | $ 9.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE SCHOTTKY REV 100V DO4 |
| More Detail: | Diode Schottky, Reverse Polarity 100V 35A Chassis,... |
| DataSheet: | MBR35100R Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 8.24719 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Schottky, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 35A |
| Voltage - Forward (Vf) (Max) @ If: | 840mV @ 35A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 1.5mA @ 20V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Chassis, Stud Mount |
| Package / Case: | DO-203AA, DO-4, Stud |
| Supplier Device Package: | DO-4 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
The MBR35100R is a single rectifier diode created to provide an economical solution to general purpose rectification needs. It is a 100 V avalanche device used in applications such as voltage doublers, bridge rectification, polarity protection, and reverse energy protection. This diode is made of a PN junction between two types of semiconductor materials, which limits current flow to one direction.
Package and form factor
The MBR35100R is packaged in an SOT-223 form factor and has a minimum lead temperature of 260°C. It features an approximate capacitance of 14 pF, a breakdown voltage of 100V, and a repetitive peak reverse voltage of ≥ 100V.
Main applications
The MBR35100R is commonly used in applications requiring general rectification and protection. Typical uses of the MBR35100R include reverse energy protection, polarity protection, bridge rectification, voltage doublers, and chokes. It can also be used for motor control applications, switchmode power supplies, and uninterruptible power supplies (UPS).
Advantages of the MBR35100R
The MBR35100R features an avalanche diode designed to increase the speed of switching. Its four terminals provide additional flexibility and “wings” on the cavity provide effective heat dissipation. The four-terminal package also allows for increased flexibility in mounting, making the MBR35100R an ideal solution for applications where space is limited. Furthermore, the MBR35100R is reliable and offers a low forward voltage drop and high surge current, making it a cost-effective solution for many applications.
Working principle of the diode
At the heart of the diode is a PN junction, which is composed of two different types of semi-conductive materials. This forms an electrical barrier that allows current to flow in only one direction. As the voltage at the anode of the PN junction increases, the current is blocked until it reaches the breakdown voltage, at which point the current is allowed to flow. This is known as avalanche breakdown, which is the main mechanism used by the MBR35100R.
Conclusion
The MBR35100R is a single rectifier diode designed to provide an economical solution for general purpose rectification needs. It is used in a variety of applications, including voltage doublers, bridge rectification, polarity protection, and reverse energy protection. The MBR35100R has a breakdown voltage of 100V, a capacitance of 14 pF, and a repetitive peak reverse voltage of ≥ 100V. The four-terminal package offers additional flexibility, and the “wings” on the cavity provide effective heat dissipation. The MBR35100R is a reliable, cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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MBR35100R Datasheet/PDF