Allicdata Part #: | MBR8H100MFST1GOSTR-ND |
Manufacturer Part#: |
MBR8H100MFST1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 100V 8A 5DFN |
More Detail: | Diode Schottky 100V 8A Surface Mount 5-DFN (5x6) (... |
DataSheet: | MBR8H100MFST1G Datasheet/PDF |
Quantity: | 1500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 2µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The MBR8H100MFST1G is a high-performance rectifier diode that is thermally protected. It is a single rectifier used in switching mode power supplies, as well as any other power device that requires high efficiency and low voltage drop. The low voltage drop is achieved with very low forward voltage, which still allows current to flow with minimal resistance.
This device is a PN junction that acts as a one-way switch for electric current. It is composed of N-type and P-type semiconductor material, which is then held together in a familiar design. The P-type semiconductor material has positive charge on it and the N-type semiconductor material has negative charge. When a forward voltage is applied to this semiconductor construction, holes from the P-type material move to the N-type material. The moving holes create a concentration gradient in the device and a conducting path is created between the electrodes. The semiconductor junction is then said to be in forward bias.
The MBR8H100MFST1G capability to control Heat is effectively improved by increasing the current carrying capacity. This device can handle up to 100A current. It has high surge current and offers four mounting options. The Electronic thermal protection helps to protect the device from overload by preventing current overload and overheating. This is done by using small device components and reducing the voltage drop, resulting in higher efficiency. The device also has a low forward voltage drop of 0.81v making it perfect for use in low voltage applications, such as switching mode power supplies.
The wide variety of applications for the MBR8H100MFST1G includes: DC motors, converters, power inverters and other circuit applications. It can also be used in electric vehicles, and UPS power supplies. In addition, the device is suitable for battery-powered circuits and AC systems. Due to its low voltage drop, it is also suitable for power factor correction.
Overall, the MBR8H100MFST1G is a high performance rectifier diode, designed to provide efficient and reliable power control. Its low forward voltage drop and high surge current capabilities make it ideal for use in a wide variety of applications, ranging from switching mode power supplies to electric vehicles. Its electronic thermal protection ensures that it can handle large amounts of current with minimal resistance and the four mounting options offer flexibility and convenience.
The specific data is subject to PDF, and the above content is for reference
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