| Allicdata Part #: | MBRB10100CT-E3/8W-ND |
| Manufacturer Part#: |
MBRB10100CT-E3/8W |
| Price: | $ 0.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ARRAY SCHOTTKY 100V TO263 |
| More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 5A... |
| DataSheet: | MBRB10100CT-E3/8W Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.45674 |
| Series: | TMBS® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io) (per Diode): | 5A |
| Voltage - Forward (Vf) (Max) @ If: | 850mV @ 5A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 100µA @ 100V |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Base Part Number: | MBRB10100CT |
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The MBRB10100CT-E3/8W is a silicon carbide (SiC) Schottky rectifier array assembled in a thermally enhanced 3-pin, dual-in-line flat-lead package. This device is designed to reduce conduction losses over semiconductor power rectifiers. It is ideal for both commercial and industrial applications that require high efficiency, low power dissipation, and improved transient performance.
The application field of the MBRB10100CT-E3/8W includes the following: high efficiency switching power supplies; power conditioning; motor drives; battery charging; industrial and consumer electronics converters; renewable energy generation and control; and load shedding. Additionally, this device is suitable for high-temperature operations, including military, aerospace, automotive and commercial applications.
This device operates using an advanced technology that provides power efficiency, low power dissipation and improved transient performance, compared to standard power rectifiers. When compared to standard power rectifiers, the MBRB10100CT-E3/8W features 18V DC blocking voltage; power efficiency up to 89%; total conduction losses up to 0.6W, and a maximum current rating of 10A, with a forward voltage drop of 1.8V.
The working principle of the MBRB10100CT-E3/8W is based on average current conduction, resulting in a rectangular waveform, instead of the traditional half-wave rectifier waveform. This is due to the unique structure of the MBRB10100CT-E3/8W, which is made up of four individual SiC Schottky rectifiers connected in a bridge configuration. This design allows the current to flow through two paths, one path conducts and the other path blocks, allowing for higher effiency and improved transient performance.
In addition to its average current conduction characteristics, the MBRB10100CT-E3/8W also features improved control of voltage levels in the application, by providing a regulated output voltage at higher load currents. This is a result of the improved switching characteristics of the SiC rectifiers. The device also features high temperature operation, allowing for operation in harsh environments and applications, such as military, aerospace, and automotive.
Overall, the MBRB10100CT-E3/8W is an ideal solution for applications that require high efficiency, low power dissipation, and improved transient performance. The device is suitable for a wide range of application fields and can operate in hostile environments with high temperature operation; and its design allows for improved control of voltage levels while delivering average current conduction.
The specific data is subject to PDF, and the above content is for reference
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MBRB10100CT-E3/8W Datasheet/PDF