MBRB735-E3/45

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Diodes - Rectifiers - Single

MBRB735-E3/45 is a high-efficiency, high-reliability and high-speed rectifier diode. As a monolith rectifier, it is composed of a Silicon, Metal and Silicon-Carbide Structure (Si-MOS-C). It has low leakage current, low forward voltage drop and low reverse breakdown droop, thus providing the highest efficiency and highest power density for high power applications.

MBRB735-E3/45 is specifically designed for use in high-power power supply, lighting and high voltage inverter applications. With its wide operating temperature range from -55°C to +150°C, it provides a reliable operation in harsh environments.

Application Fields

MBRB735-E3/45 is primarily designed for high power applications, such as:

• Power supply design: power supply and lighting applications.
• High voltage inverter applications: HVIGs, IGBTs and high power active rectifiers.
• High voltage flyback voltage boosts: HVBDC and HVAC switches.
• High frequency power line communication: HFPCs and HFVRS.
• Heavy Duty AC/DC converters: DC-DCs, DC-ACs and AC-DCs.
• Switched mode power supplies: DC-DCs, DC-ACs and AC-DCs.
• High Power RGB lighting applications.

MBRB735-E3/45 can also be used in automotive and military applications due to its wide operating temperature range. It is also suitable for ultra-fast switching applications, such as in motor control, where a high frequency (>1MHz) is required.

Working Principle

The MBRB735-E3/45 diode operates based on the principle of avalanche breakdown. When a sufficient reverse voltage is applied, the electric field generated by the charge carriers in the depletion layer is increased to such a level that the carriers are accelerated to a speed high enough to gain enough energy to create electron-hole pairs by impact with the silicon atoms in the crystal.

This in turn creates a large reverse current, which is referred to as the avalanche current. This avalanche current is greater than the previously existing reverse current, thus forming a current path through the diode that is able to sustain itself, even at very low reverse voltages.

The reverse voltage is limited by the avalanche breakdown, and the current is limited by the thermal and power dissipation capabilities of the device, thus resulting in a low forward voltage drop.

The MBRB735-E3/45 also features a very low reverse recovery time which makes it suitable for high-frequency applications and high-speed switching applications.

Conclusion

The MBRB735-E3/45 is a high-efficiency, high-reliability and high-speed rectifier diode. With its wide operating temperature range and low reverse recovery time, it is suitable for a wide range of high power applications, such as power supply and lighting applications, high voltage inverter applications, heavy duty AC/DC converters and high power RGB lighting applications. The working principle of the MBRB735-E3/45 is based on the principle of avalanche breakdown.

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