MBRB20H60CTHE3_A/I Allicdata Electronics
Allicdata Part #:

MBRB20H60CTHE3_A/I-ND

Manufacturer Part#:

MBRB20H60CTHE3_A/I

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 60V TO263AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 60V 10A...
DataSheet: MBRB20H60CTHE3_A/I datasheetMBRB20H60CTHE3_A/I Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 710mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 60V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Description

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The MBRB20H60CTHE3_A/I diode is part of a wide family of rectifier arrays, providing a voltage-controlled rectifier (VCR) and a current-controlled rectifier (CCR). The main application field for this device is for full-wave bridge rectifier and rectifier array applications. With a VCR, a wide range of input voltages can be rectified and the quiescent current is controlled by the input voltage. With a CCR, the current rectified remains the same even with changes in the input voltage.

This diode is a 4-chip bi-functional rectifier array and is designed for use in high input current and high switching frequency applications. It features an excellent soft recovery performance and a fast body diode for application areas with high-frequency voltage ripple or noise. It also has a low forward voltage drop and fast switching speeds, making it a suitable choice for applications requiring high efficiency.

The working principle of the MBRB20H60CTHE3_A/I is based on two diodes, each connected in series. The diodes are arranged as a reverse-biased diode in parallel with an externally biased diode. When the external voltage exceeds the forward breakdown voltage range of the diode, a current will flow through the circuit for a given time. This current causes the voltage to drop quickly and when the voltage reaches the zero crossing point, a short recovery time occurs before the voltage drops again. This process repeats itself until the external voltage is reduced below the forward breakdown voltage range.

The MBRB20H60CTHE3_A/I diode is well suited for circuits dealing with high-frequency voltage ripple or noise, while its low forward voltage drop and fast switching speed make it ideal for applications requiring high efficiency. Furthermore, the diode’s fast recovery time helps reduce ringing and overstress on the circuit components. Combined with its flexible operating parameters, this diode makes a fantastic choice for various rectifier array applications.

The specific data is subject to PDF, and the above content is for reference

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