| Allicdata Part #: | MBRB1045-E3/81GITR-ND |
| Manufacturer Part#: |
MBRB1045-E3/81 |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 45V 10A TO263AB |
| More Detail: | Diode Schottky 45V 10A Surface Mount TO-263AB |
| DataSheet: | MBRB1045-E3/81 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.36000 |
| 10 +: | $ 0.34920 |
| 100 +: | $ 0.34200 |
| 1000 +: | $ 0.33480 |
| 10000 +: | $ 0.32400 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 45V |
| Current - Average Rectified (Io): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 840mV @ 20A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 100µA @ 45V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Base Part Number: | MBRB1045 |
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The MBRB1045-E3/81 is a single, rectifier diode for use with high-power, high-frequency applications. Commonly referred to as an Schottky diode, it has a Schottky barrier structure and operates in a very efficient manner. This type of diode has excellent reverse leakage characteristics and can be used as a rectifier in various electronic systems.
The primary application fields of the MBRB1045-E3/81 are high-frequency switching applications, power regulation applications, and motor control applications. It is frequently used in DC/DC converters, power controllers, and PWM voltage regulators. It is also suitable for use in switched-mode power supplies and voltage regulator modules.
The primary advantage of the MBRB1045-E3/81 is its ability to operate at very high switching frequencies. This is due to its Schottky barrier structure, which has a much lower forward voltage drop compared to a standard rectifier diode. This reduces power losses, improves efficiency, and enables much higher switching speeds.
The working principle of the MBRB1045-E3/81 is based on the Schottky Barrier Diode (SBD). When a forward voltage is applied, a reverse electric current will flow from the anode (1) to the cathode (2). This current flow is limited by the small electric field across the barrier region. The electric field helps to keep the reverse current at a minimum, ensuring low on-state losses and a low forward voltage drop. Furthermore, due to its low reverse leakage characteristics, the MBRB1045-E3/81 can be used in various high-frequency switching applications.
In addition, the MBRB1045-E3/81 has a low thermal runaway temperature, which allows the diode to remain relatively cool and keep its high efficiency even during extended periods of high-power operation. This is especially useful in applications where high-speed switching and power regulation are required.
Finally, the MBRB1045-E3/81 has a wide operating temperature range, making it suitable for use in many different environments. As such, it is an ideal choice for a variety of applications, from high-end consumer electronics to industrial and automotive systems.
In conclusion, the MBRB1045-E3/81 is a high-performance, single rectifier diode for use in high-power, high-frequency applications. Its key advantages include its Schottky barrier structure, its low forward voltage drop, its low reverse leakage characteristics, its low thermal runaway temperature, and its wide operating temperature range. With these features, the MBRB1045-E3/81 is an effective and reliable choice for various electronic systems.
The specific data is subject to PDF, and the above content is for reference
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MBRB1045-E3/81 Datasheet/PDF