Allicdata Part #: | MBRB1045T4GOSTR-ND |
Manufacturer Part#: |
MBRB1045T4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 45V 10A D2PAK |
More Detail: | Diode Schottky 45V 10A Surface Mount D2PAK |
DataSheet: | MBRB1045T4G Datasheet/PDF |
Quantity: | 7200 |
Series: | SWITCHMODE™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 840mV @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 45V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MBRB1045 |
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MBRB1045T4G is a single rectifier diode commonly used in many applications such as solar cells, power supply, and high voltage direct current flow rectification. Its primary purpose is to conduct current in one direction, converging both AC and DC power sources in a single device. This diode is specifically made for high voltage direct current (HVDC) situations which can lower the dissipation of heat and power required with this type of electrical source.
The MBRB1045T4G rectifier diode is designed with a glass passivated junction to secure better performance and longer operational lifespan. Its high voltage direct current application allows it to take direct control of the current instead of it being limited to a smaller current impedance which is found in low voltage direct current (LVDC) applications. Its glass passivation layer increases stability, resulting in an easy to use, reliable device.
The MBRB1045T4G rectifier diode is capable of handling a maximum forward current of 10A and a maximum reverse voltage of 450V. Its low reverse leakage current is less than 0.001 milliamps (mA) with ideal circuit conditions, allowing for minimal electrical losses in applications such as power supply, solar panel charge controllers, and electric vehicles (EVs). Additionally, the diode has a low thermal resistance of 1.4K/W, resulting in a higher voltage output for applications such as diode logic circuits and DC motors. The diode also has a relatively small physical size, making it easy to install in many applications.
The working principle of the MBRB1045T4G rectifier diode is based on the V-I curve, also known as the diode characteristic curve, that classifies the elements of voltage and current within the device. When a forward bias voltage is applied to the base of the diode, the V-I curve is horizontally shifted, allowing the current to flow through the device. The amount of current that the MBRB1045T4G can handle will depend on the level of the forward bias voltage applied to it.
When a reverse voltage is applied to the base of the diode, the V-I curve is vertically shifted, blocking the current flow through the device. The amount of reverse voltage applied to the diode is proportional to the amount of blocking current that the device can handle. Thus, the diode\'s capability to handle higher voltage levels depends on the withstand voltage of the device and its maximum reverse current.
To consolidate, the MBRB1045T4G is a high-voltage, single rectifier diode commonly used in many applications. Its primary purpose is to convert AC currents into DC whilst removing fluctuations within the electrical flow. Its glass passivated junction increases the stability and longevity of the device, allowing it to handle a maximum forward current of 10A and a maximum reverse voltage of 450V. The working principle of the MBRB1045T4G is on the basis of the V-I curve, where the current and reverse current levels are proportionally hooked up with the amount of forward bias or reverse bias voltage applied to the diode.
The specific data is subject to PDF, and the above content is for reference
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