MBRB2545CT-E3/81 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io) (per Diode):	15A
Voltage - Forward (Vf) (Max) @ If:	820mV @ 30A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	200µA @ 45V
Operating Temperature - Junction:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Base Part Number:	MBRB2545CT

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Diodes - Rectifiers - Arrays: MBRB2545CT-E3/81 Application Field and Working Principle

The MBRB2545CT-E3/81 is a high-power Schottky barrier rectifier, manufactured by ON Semiconductor. This rectifier is used in applications from solar cells to power supply designs. It\'s an extremely important part of the diode-rectifier arsenal for a number of reasons.First, the MBRB2545CT-E3/81 is designed to withstand extreme voltage and ambient temperatures, making it a must-have for high-voltage and high-temperature applications. It is also designed with a low forward voltage drop, saving both energy and money. Finally, the MBRB2545CT-E3/81 is designed with a low reverse-current leakage, giving it unmatched longevity and performance.Now that we\'ve established the basics of this Schottky barrier rectifier, let\'s talk about its application field and working principle. Basically, the MBRB2545CT-E3/81 is designed to be used in applications that require a low forward voltage drop and a good reverse-current leakage for high-voltage and high-temperature operations.Specifically, these rectifiers are used in solar cells and power converters, micro-inverters, laptops, and electronic gadgets such as digital radios. They are used as the primary rectifier to reduce forward voltage drop while still giving high-efficiency performance.The working principle of the rectifier is as follows: a metal-structure Schottky rectifier is inserted into a conventional diode emitter, forming a metal-oxide-semiconductor (MOS) junction. This MOS junction is combined with a diode-emitter similar to a silicon pn junction diode. When current flows through the MBRB2545CT-E3/81, electrons are injected from the metal-emitter and the metal-oxide junction.The electrons travel through the silicon pn junction and disperse as negative charges in the n-type region. The process is reversed when the device is turned off and the electrons return to the metal-emitter and metal-oxide junction, resulting in a low forward voltage drop and low reverse-current leakage.Finally, the MBRB2545CT-E3/81 Schottky barrier rectifier offers superior performance, energy savings, and protection in high-voltage and high-temperature environments. It is a vital part of the diode-rectifier arsenal and is used in applications from solar cells to power conversion designs. It is designed with a low forward voltage drop and a low reverse-current leakage, giving it unmatched longevity and performance. The application field and working principle of this rectifier make it an essential part of the rectifier and diode market.

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