MBRB25H60CTHE3/81 Allicdata Electronics
Allicdata Part #:

MBRB25H60CTHE3/81-ND

Manufacturer Part#:

MBRB25H60CTHE3/81

Price: $ 0.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 60V TO263AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 60V 15A...
DataSheet: MBRB25H60CTHE3/81 datasheetMBRB25H60CTHE3/81 Datasheet/PDF
Quantity: 1000
800 +: $ 0.78818
Stock 1000Can Ship Immediately
$ 0.88
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 60V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Description

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The MBRB25H60CTHE3/81 is classified as a Diode-Rectifiers Array comprised of 2 x 60V, 25A Schottky barrier rectifiers. It has a Max Repetitive Reverse Voltage of 600V and a Forward Voltage drop of 750mV at 25 Amp. Given its high currents, the MBRB25H60CTHE3/81 is typically used in areas where rectifiers need to handle high current flow and overload situations, such as in power supply circuitry, battery chargers, and mixed-signal Rectifier circuits.

A Schottky Diode is a semiconductor device that, like a standard P-N junction Diode, conducts current in one direction, but in a more efficient manner. This is because the internal barrier potential of a Schottky Diode is much lower than that of a standard P-N junction Diode, allowing the Schottky Diode to have a much lower forward voltage drop. The MBRB25H60CTHE3/81 is thus especially beneficial in high-frequency applications, due to the low voltage drop.

When comparing a Schottky Diode and a standard P-N junction Diode, the Schottky Diode has the added ability to shed heat. This is because a Schottky Diode does not have the internal electric fields associated with a standard P-N junction Diode, allowing for increased reverse leakage current. This feature is important for applications that require robustness, such as cars and heavy machinery.

Functionally, the MBRB25H60CTHE3/81 works in a very similar way to the P-N junction discussed earlier. A Schottky Diode consists of a metal contact on an n-type (or p-type) semiconductor. When a forward voltage is applied, the electrons (or holes) are able to flow freely across the barrier potential and the diode is activated. In the reverse direction, the diode acts like an open switch and the current is blocked.

The MBRB25H60CTHE3/81 is a high current device, meaning it is capable of handling up to 25 Amps. In most applications, this is more than enough current to handle the demands of a circuit. However, even though the rated device current is high, it is still important to use a heat sink. Failure to do so can result in the device overheating and permanent damage to the diode.

The MBRB25H60CTHE3/81 is typically used in applications that require large amounts of current flow. This can include circuit boards and 12V systems. The device has a very low forward voltage drop, meaning that it is more efficient at conducting current in both directions. The device is also highly robust, meaning it is able to stand up to high voltage overloads and spikes. Additionally, the device can also be used to shed heat in applications that require robustness. Overall, the MBRB25H60CTHE3/81 is an excellent choice for applications that require both power and efficiency.

The specific data is subject to PDF, and the above content is for reference

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