Allicdata Part #: | MBRB30H50CTHE3/81-ND |
Manufacturer Part#: |
MBRB30H50CTHE3/81 |
Price: | $ 0.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY SCHOTTKY 50V TO263AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 50V 15A... |
DataSheet: | MBRB30H50CTHE3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.87230 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io) (per Diode): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 680mV @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 60µA @ 50V |
Operating Temperature - Junction: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
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The MBRB30H50CTHE3/81 is a diode array belonging to the family of rectifiers. This diode array is composed of three internally connected high-power, 30A Schottky Barrier Rectifiers (SBRs). It consists of a series connection of three diodes in a single package. It is designed to handle high-power with a low-voltage drop, both characteristic features of the Schottky Barrier rectifier.
The MBRB30H50CTHE3/81 is designed for power-switching applications in high-power, low-voltage high-current DC/DC converters and AC/DC converters. Its wide range of operating junction temperatures coupled with tight parameters makes it suitable for a variety of applications such as AC/DC rectification, DC/DC conversion, DC/AC conversion, power-switching, and general-purpose rectification. Additionally, its high frequency capabilities make it highly suitable for applications such as motor drives, power inverters and LED lighting.
The working principle of the MBRB30H50CTHE3/81 involves a junction formed between the P-type and N-type semiconductor materials in the diode array. This junction occurs when an electric field from a voltage source is applied across both types of materials. As a result, a depletion region is formed. This depletion region is formed due to a repulsive force present between the positively-charged holes in the P-type side and the negatively-charged electrons on the N-type side. This repulsive force causes holes to become offset and allows for the diode array to be activated and thus permit current to flow. This flow of electrons by the junction is known as a forward bias and is the means by which current is transmitted.
The MBRB30H50CTHE3/81 has a typical forward voltage drop of 0.51V and a maximum surge current rating of 238A. The operating temperature of the device ranges from -55°C to +175°C making it suitable for high-temperature applications. The diode also offers good surge current capability, low power loss and low temperature coefficient. These features make the MBRB30H50CTHE3/81 ideal for use in power supplies and DC/DC converters.
The MBRB30H50CTHE3/81 diode array is an excellent choice for a wide range of applications in power conversion. Its high-power capability and low forward voltage drop make it highly suitable for use in a variety of applications such as AC/DC rectification, DC/DC conversion, DC/AC conversion, power-switching, and general-purpose rectification where a high-current, low-voltage solution is required.
In conclusion, with its wide range of operating junction temperatures and tight parameters, the MBRB30H50CTHE3/81 diode array is an excellent choice for applications in high-power, low-voltage high-current DC/ DC and AC/DC conversion. Its high surge current rating, low power loss and low temperature coefficient make it suitable for a variety of power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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