MBRD1035CTLT4G

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The MBRD1035CTLT4G device is used within a number of applications due to its effectiveness and reliability. These applications can range from consumer electronics to more industrial applications. It can be classified under Diodes - Rectifiers - Arrays due to its structure and characteristics.

The main purpose of the MBRD1035CTLT4G device is to provide a high-voltage rectification application with an efficient, robust and reliable system. This device is a triple high voltage rectifier with center tap consisting of three single-phase rectifiers mounted in a single package. This device is ideal for medium to large current applications, such as for power supplies and automotive applications.

It is constructed from a single Schottky die with Schottky barrier contact around its anode. The die itself is mounted on an insulated substrate and each rectifier has a different lead connected to it. The center tap lead is soldered directly onto the substrate, while the anode and cathode leads are connected to the substrate through bonded copper wires. This ensures a robust and reliable connection.

The MBRD1035CTLT4G’s working principle is based on the rectification process. The process occurs when the alternating current (AC) is applied to the device, it turns the alternating current’s electrical energy into direct current (DC) energy. It does this by allowing the current to heavily pass through one of the diodes, which leads to the current being cut off from the other diodes and as a result, the alternating current is turned into direct current.

The rectification process is enhanced by the use of Schottky junction structures and special metal-silicon contact structures. Schottky junction structures allow for a low forward voltage drop across the device, which improves efficiency and power utilization. In addition, the use of special metal-silicon contact structures helps reduce the on-state resistance and improve the current carrying capacity of the device, as well as its efficiency.

The MBRD1035CTLT4G can operate at voltages of up to 800V, with current ratings of up to 8.0A. The device has a peak reverse voltage of 1.1kV and a typical forward voltage of 1.1V. It has a thermal resistance of 5.0 K/W and a typical on-state resistance of 0.11 Ohm. In addition, the device is RoHS compliant, making it suitable for use in various applications.

In conclusion, the MBRD1035CTLT4G device is ideal for high-voltage rectification applications and can be used in a variety of applications, such as in consumer electronics, power supplies and automotive applications. Its operation is based on the processes of rectification and Schottky junction structures and its robust construction ensures reliability.

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