Series:	SWITCHMODE™
Packaging:	Tube
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	600mV @ 3A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	200µA @ 50V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Operating Temperature - Junction:	-65°C ~ 150°C
Base Part Number:	MBRD350

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MBRD350G application field and working principle

Introduction

The MBRD350G Schottky rectifier is a single-die Schottky barrier rectifier that offers superior leakage and reverse voltage dv/dt capability in a small, easy to place package. Due to the inherent benefits of Schottky barrier rectifiers, the MBRD350G is suitable in wide range of applications. In this article, we will explore the application fields and working principle of MBRD350G rectifiers.

Application Field

The MBRD350G rectifier has an array of potential applications due to its high-efficiency, low-leakage characteristics. The rectifier is an ideal choice for high-speed switching applications, such as monitoring systems, photo-voltaic, switching power supplies and DC-DC convertors. Due to its low-profile packaging, it is also suitable for space-constrained applications where a high-switching frequency is desired. The MBRD350G rectifier is also useful in applications where reverse breakdown voltages of less than 50V are required; MBRD350G rectifiers are often used in such applications.

Working Principle

The MBRD350G rectifier is based on Schottky barrier rectification, a type of rectification that relies on a metal-semiconductor junction to control the flow of electrical current. The way this rectification works is as follows: when forward-biased, the metal-semiconductor junction acts as a diode and provides a low voltage drop across the device. The reverse-biased state, on the other hand, prevents the flow of current. To illustrate this principle, let’s consider a MBRD350G rectifier that has a VF (forward voltage) of = 200mV and a reverse breakdown voltage (VR) of = 100V. When the device is forward-biased, it will provide a low voltage drop of 200mV across the device. In contrast, when the device is reverse-biased, it will be able to handle voltage up to 100V.

Conclusion

The MBRD350G rectifier provides a wide array of potential applications due to its low-profile packaging and high-efficiency characteristic. The rectifier is mostly suitable for applications where high-switching frequencies are desired. Its working principle is based on Schottky barrier rectification, which relies on a metal-semiconductor junction to control the flow of electrical current. Thus, the MBRD350G rectifier is a suitable choice for applications where reverse breakdown voltages of less than 50V are required.

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