MBRD560TR

Operating Temperature - Junction:	-55°C ~ 150°C
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	60V
Current - Average Rectified (Io):	5A
Voltage - Forward (Vf) (Max) @ If:	650mV @ 5A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1mA @ 60V
Capacitance @ Vr, F:	300pF @ 5V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

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MBRD560TR Application Field and Working Principle

Introduction to MBRD560TR

MBRD560TR is a rectifier diode device made by ON Semiconductor. It is a surface mount, high-speed Schottky rectifier with low forward voltage drop and reverse current leakage characteristics. As a single-phase bilateral device, it provides excellent conduction in two directions and is an ideal diode for high-speed, low-power applications in the electronics industry.

Application Field of MBRD560TR

MBRD560TR is a high-performance, low-loss and low-power rectifier device. It is suitable for a wide range of applications, including Voltage Regulator Modules (VRM), intermediate bus converters (IBC), point of load (POL) applications, power factor correction circuits (PFC), and many other applications. In industries such as motor control, energy storage, aerospace, and automotive, where high-energy efficiency is required, MBRD560TR is an excellent choice as it greatly increases efficiency by reducing power losses.In addition, MBRD560TR can be used in medical, telecom, consumer electronics and automotive industries. It is often used in energy systems and other high-frequency switching power supply circuits. Owing to its low reverse recovery time, it can be applied in applications requiring high-frequency switching to reduce the need for large and expensive components.

Working Principle of MBRD560TR

The working principle of the MBRD560TR is based on the Schottky barrier rectification. A Schottky rectification refers to the rectification of an alternating current into a direct current flowing in a single direction, often with the aid of a Schottky diode.The Schottky diode is specifically a semiconductor device constructed from two dissimilar metal electrodes joined together by a thin barrier. When a forward voltage is applied, electrons are injected into the barrier, reducing the barrier height and allowing the current to flow through it. When a reverse voltage is applied, the barrier is increased in height, and current cannot flow.The MBRD560TR uses this principle to provide low-power and low-loss rectification. It is constructed from two layers, one of n-type silicon (n-Si) and one of heavily-doped polysilicon. When the diode is forward biased, the polysilicon layer allows electrons to tunnel through the thin SiO2 layer between the n-type silicon and polysilicon layers. This reduces the effective width of the barrier, which in turn reduces the forward voltage drop and increases the reverse current leakage.The MBRD560TR is available in packages of 50 V or 100 V, allowing the user to choose the optimum voltage rating for their application. As a single-phase device, it provides excellent conduction in two directions.

Conclusion

High-speed rectification has numerous applications in the electronics industry, particularly in high-energy and high-frequency switching applications. The MBRD560TR is a high-performance and low-power rectifier device, making it an ideal choice for such applications. It offers low forward voltage drop, low reverse current leakage and high-speed rectification, making it well-suited to scenarios which require high efficiency, power savings and performance.

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