
Allicdata Part #: | MBRD640CT-ND |
Manufacturer Part#: |
MBRD640CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY SCHOTTKY 40V 3A DPAK |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 40V 3A ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io) (per Diode): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 700mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 40V |
Operating Temperature - Junction: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MBRD640CT |
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The MBRD640CT is a high current, non-isolated Schottky bridge rectifier array, designed for reverse-voltage use and extremely low forward voltage drop. It is suitable for applications with low voltage rectification and polarity conversion such as DC-DC converters, electronic lamp and white goods. The three-terminal device generates a high forward current for SRD applications and has very low leakage current when reverse bias is applied.
In the Schottky diode rectifier, current is allowed to flow in one direction (forward biased diode) and blocked in another direction (reverse biased diode). When the junction voltage exceeds a certain value known as the \'barrier voltage\' or \'cut in voltage\', the diode begins to conduct current, allowing a current to flow through the device. In the MBRD640CT application, the forward voltage generated is minimised to reduce power loss and improve efficiency.
The MBRD640CT is made with a unique structure of multiple rectifiers connected in parallel which allows the array to possess both low forward voltage and low reverse recovery time. Compared to low-power rectifiers, the MBRD640CT has a higher current rating, proven to suppress overstress discharges, yet retains acceptable surge ratings for SRDs.
The MBRD640CT offers superior electrical performance in terms of forward current ratings, breakdown voltage, surge rating, operating temperature, and efficiency. It covers a large operating temperature range from -55°C to 150°C, and is rated at 40A max forward current, making it ideal for applications that require an ultra-fast switching response and high power rating.
The MBRD640CT operates by allowing a flow of electrons from the anode to cathode through the Schottky diode when a sufficient forward voltage is applied. During the forward conduction process, the current passes through the parallel diode configuration and generates a constant voltage at the output. The rated operating current of the MBRD640CT is around 6 to 8A, with a forward drop of 0.45V (typical value). The average reverse current of the MBRD640CT is low – under 1mA even at a reverse voltage of 200V.
In addition to its low forward voltage, the MBRD640CT works with a low thermal resistance junction to case and superior noise reduction characteristics. It also meets industrial standards for EMI and ESD discharge with its built-in shielded metal package. This makes it suitable for a wide range of applications within the industrial, automotive, medical, and consumer electronics markets.
The MBRD640CT is an ideal diode array for applications involving fast switching, high power and low voltage rectification. Its very low forward voltage, high current ratings and thermal resistance provide great potential in these commercial applications. Its triple-junction configuration ensures improved temperature stability and reliability, making it an ideal choice for mission-critical applications.
The specific data is subject to PDF, and the above content is for reference
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