| Allicdata Part #: | MBRF12030R-ND |
| Manufacturer Part#: |
MBRF12030R |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE SCHOTTKY 30V 60A TO244AB |
| More Detail: | Diode Array 1 Pair Common Anode Schottky 30V 60A C... |
| DataSheet: | MBRF12030R Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Anode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 30V |
| Current - Average Rectified (Io) (per Diode): | 60A |
| Voltage - Forward (Vf) (Max) @ If: | 700mV @ 60A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 1mA @ 30V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | TO-244AB |
| Supplier Device Package: | TO-244AB |
Description
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MBRF12030R Application Field and Working Principle
The MBRF12030R diode array specializes in ultra high speed rectifier and fast recovery in a high-voltage, low-current environment. In the field of power electronics, this device is designed to receive and deliver high-frequency current pulses with precision speed and accuracy. This type of rectifier is particularly useful for applications in medical equipment, aerospace technology, and even automotive industries, providing efficient and cost-effective power solutions. The MBRF12030R diode array is composed of two large terminals. The first terminal is the anode and the second one is the cathode. The device is made up of 30 individual diodes connected in a star configuration to the two terminals. Generally, the operating temperature range is -55°C to 150°C and the maximum forward Voltage is 30 volts. When it comes to the functional characteristics, the MBRF12030R diode array has a forward voltage of 30 volts and a forward current of 40 amperes. This device is rated to have a reverse leakage of 200 μA at 25°C and a junction capacitance of 2.5pF. Its surge capability rating is 300 amperes. The working principle of the MBRF12030R diode array is based around the concept of voltage-controlled conduction. When the voltage across the device surpasses the predetermined voltage threshold (as set by the forward voltage rating of the diode array), conduction occurs and current flows through the anode and cathode. When the applied voltage drops below the forward voltage threshold, current ceases to flow, and the diode array is in a reversed-bias situation, resulting in no conduction. The MBRF12030R diode array is designed for applications that require fast response times and high efficiency in order to meet the needs of power-conversion applications. As the power requirements arise, this device has the capability to efficiently deliver power solutions rapidly and accurately. Due to its high-speed recovery and ultra-low power dissipation requirements, this type of rectifier is ideal for use in applications where the device must operate within a low-voltage environment of less than 30 volts. In addition, the device’s reverse leakage capability assists with preventing current flow in the reverse direction to protect against device damage. The MBRF12030R is a cost-effective and reliable rectifying solution for a variety of applications, offering superior speed and current levels with low forward voltages and minimal levels of power dissipation. This device plays an important role in many power electronic circuits and applications, providing optimized power solutions that are reliable, efficient, and cost effective.The specific data is subject to PDF, and the above content is for reference
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MBRF12030R Datasheet/PDF