MBRF1635HE3/45

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MBRF1635HE3/45 is an ultrafast and ultra-low-loss double-diffused nanometer super-junction power MOSFET device. It can be used in a broad range of application fields from automated flow control systems, telecom and datacom, healthcare, industrial and consumer applications. It is also ideal for low-loss synchronous rectification in DC/DC converters.

This product has a multitude of characteristics that make it quite appealing in its application field. This product provides lower switching losses due to its reduced on-resistance, improved performance in correlation with higher voltage and current capabilities, a wide range of configuration selections, and ruggedness.

The MBRF1635HE3/45 features a double-diffused super-junction topology that is ideal for high-frequency DC/DC converters and other circuits. It has an on-resistance of 35 mΩ, and can switch up to a voltage of 600V. It also features a maximum drain current of 12 A, as well as a maximum drain voltage of 800V. This MOSFET device also has a fast soft-switching capability that helps to reduce switching losses in applications that operate at high frequencies.

The working principle of the MBRF1635HE3/45 is based on a super-junction topology that consists of a series of vertical MOSFETs connected in parallel. When a voltage is applied to the gate of the MOSFET, an electric field is generated that modulates the channel density, resulting in an on-state. As the channel density increases, the on-resistance of the MOSFET decreases, which allows more current to flow through the device. In addition, because of its low gate threshold voltage and its high forward transconductance, the MBRF1635HE3/45 can be used in a wide variety of applications.

Overall, the MBRF1635HE3/45 is an ultrafast and ultra-low-loss double-diffused nanometer super-junction power MOSFET device that is perfect for low-loss synchronous rectification in DC/DC converters. It has a multitude of characteristics that make it quite appealing in its application field, including an on-resistance of 35 mΩ, a maximum drain voltage of 800V, a maximum drain current of 12A, and a fast soft-switching capability. Its working principle is based on a super-junction topology that consists of a series of vertical MOSFETs connected in parallel. It has been designed to be used in a broad range of application fields from automated flow control systems, telecom and datacom, healthcare, industrial and consumer applications.

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