| Allicdata Part #: | MBRF2545CT/45GI-ND |
| Manufacturer Part#: |
MBRF2545CT/45 |
| Price: | $ 0.70 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ARRAY SCHOTTKY 45V ITO220 |
| More Detail: | Diode Array 1 Pair Common Cathode Schottky 45V 12.... |
| DataSheet: | MBRF2545CT/45 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.62999 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 45V |
| Current - Average Rectified (Io) (per Diode): | 12.5A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 200µA @ 45V |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | ITO-220AB |
| Base Part Number: | MBRF2545CT |
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The MBRF2545CT/45 is a 25-amp, 45-volt Schottky barrier rectifier (SBR) array, with a forward-biased voltage of 0.45 volts. It belongs to the family of discrete semiconductor diodes, which are used to convert alternating current (AC) to direct current (DC). The MBRF2545CT/45 is suitable for use in moderate- to high-speed switching applications, such as telecommunication, automotive, computer and consumer electronics.
The heart of MBRF2545CT/45 arrays is a structure known as Schottky barrier. It essentially consists of a metal-semi-conductor (MS) junction, with a thin layer of metal, usually platinum, lying between the metal and semiconductor layer. This is a relatively low resistive ohmic contact due to the high concentration of minority carriers present at this interface, making it suitable for faster-switching applications.
The main purpose of the MBRF2545CT/45 is to provide high switching performance for applications requiring intermittent and peak current. The device combines the advantages of small size and low on-state resistance (RDS). Due to this, MBRF2545 can achieve higher peak forward-biased currents, making it suitable for use in AC and DC motor drives, solid state relays, etc.
The working principle of the MBRF2545CT/45 is based on its fundamental diode construction. When an anode current passes through the N-type (negative) layer, the electrons in the N-type layer interact with the platinum and form a potential barrier. The potential barrier prevents the electrons from entering the P-type (positive) layer. As a result, a DC current is created.
At the MBRF2545CT/45, a special structure is developed to reduce the forward-biased voltage. This feature increases the efficiency of the device, reduces the power dissipation, and ensures high current-handling capability. Moreover, it helps to reduce the temperature rise and permits high switching speeds.
In any electronic system, fast switching devices are used to protect delicate components from voltage spikes and current surges. The MBRF2545CT/45 is perfectly suited for these applications, as it can withstand high transient spikes due to its high current-handling capability. Moreover, due to its low forward-biased voltage, it is capable of providing precise switching.
In addition to its usage in various electronic systems, the MBRF2545CT/45 can also be deployed in solar-cell panels. The device can be used to convert the solar panel’s output into a regulated DC voltage. This voltage can then be used to charge batteries or power any DC-compatible device.
The MBRF2545CT/45 is a key component in any electronic circuit, as it serves to perform various switching and protection functions. The device is extremely reliable, especially for applications which require high reliability and high current-handling ability.
The specific data is subject to PDF, and the above content is for reference
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MBRF2545CT/45 Datasheet/PDF