MBRF40030R Allicdata Electronics
Allicdata Part #:

MBRF40030R-ND

Manufacturer Part#:

MBRF40030R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE SCHOTTKY 30V 200A TO244AB
More Detail: Diode Array 1 Pair Common Anode Schottky 30V 200A ...
DataSheet: MBRF40030R datasheetMBRF40030R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB
Description

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The MBRF40030R is a highly reliable silicon avalanche diode array manufactured by NXP Semiconductors. It is a surface-mountable device that consists of four individual silicon avalanche diodes connected in parallel. Each diode has a reverse Recovery time of less than 10 n and a maximum reverse voltage of 400 V. MBRF40030R is suitable for high power applications like rectifiers, converters, and as ESD protection.

The MBRF40030R is mainly used in applications that require highly efficient rectification. It is used in power rectification applications, such as motor control and DC/DC power supply. The MBRF40030R can also be used as an ESD protection since it has a fast reverse recovery time and can absorb high energy. Furthermore, the MBRF40030R is used in half-bridge resonant converters, where it rectifies the converted output from the transformer.

A diode array is an electronic device with two or more diodes connected together. Diodes are semiconductor devices that allow current to flow in one direction, while blocking current flow in the opposite direction. The MBRF40030R diode array is made up of four rectifiers, which are connected in parallel. A parallel connection of the diodes allows the device to provide higher current than a single diode. The application of the MBRF40030R is mainly in the rectification of AC signals and to provide ESD protection.

The working principle of the MBRF40030R is based on avalanche breakdown. Avalanche breakdown occurs when a high reverse voltage is applied across a semiconductor junction. In order to set up avalanche breakdown, a special process is used to dope the inner layer of the semiconductor junction with ions. This process is known as ion implantation. The ion implantation process creates a large number of charge carriers in the semiconductor junction, which produces a strong electric field and leads to avalanche breakdown.

When a reverse voltage is applied across the diode, the electric field reduces and the electrons and holes move in opposite directions. The charged particles start to collide with each other, causing the electric field to become stronger. This increases the chance of more particles colliding, causing the electric field to become even stronger. This effect is known as avalanche multiplication, creating a current surge and a high electrical current.

The MBRF40030R is a highly efficient and reliable device used in rectifiers and converters. It has a fast reverse recovery time, making it suitable for ESD protection. Furthermore, its four-diode structure provides higher current than a single diode. The MBRF40030R provides optimized thermal and electrical performances for medium-power applications.

The specific data is subject to PDF, and the above content is for reference

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