MBRH20080 Allicdata Electronics
Allicdata Part #:

MBRH20080GN-ND

Manufacturer Part#:

MBRH20080

Price: $ 20.39
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE SCHOTTKY 80V 200A D-67
More Detail: Diode Schottky 80V 200A Chassis Mount D-67
DataSheet: MBRH20080 datasheetMBRH20080 Datasheet/PDF
Quantity: 1000
50 +: $ 18.35270
Stock 1000Can Ship Immediately
$ 20.39
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: --
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Description

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The MBRH20080 is one type of diodes classified as rectifiers. It is a single diode, possessing a diverse range of applications. It is used as both a rectifier and a switch, in an array of power systems. This article will discuss the applications of this device and its working principle.

In terms of its applications, the MBRH20080 can be used to protect simple electronic circuits, as it has a high reverse-leakage current in comparison to most other diode types. It is commonly used in lighting systems, as its robust construction allows it to sputter open in the event of thermal or other overloads. It can be used to rectify high voltage circuits, and its powerful reverse voltage avalanche feature makes this type of diode ideal for many industrial applications, where high voltage current is present. It also has considerable use in motor drivers, switching in electrical transformers and in inverters.

In regards to its working principle, the MBRH20080 functions as a simple rectifier. Its anode is connected to the free end of the applied voltage, with the opposite end connecting to its cathode. Current then flows through the diode when positive voltage is applied, conversely, when negative voltage is applied, current is prohibited from flowing. It functions by forming a p–n junction, a boundary between the p-type and n-type regions of a semiconductor material, which acts to restrict the flow of electrons. This feature, amongst others, is advantageous in controlling both the magnitude and the direction of the current in the circuit.

The MBRH20080 is efficient when used in power systems, able to regulate a wide range of electrical parameters. It is composed of two distinct layers, an anode and a cathode, separated by an ultra-thin layer of insulating material, which is known as a junction. This creates two distinct areas, an n-type region, which is negatively charged and p-type region, which is positively charged. This allows the diode to control the current by permitting electron charge movement in one direction, while inhibiting the opposite direction. As a result, the electrons are allowed to flow from the anode to the cathode, but unable to move in the opposite direction.

Yet, MBRH20080 also features a high reverse voltage avalanche ability. This allows the diode to conduct in a reverse direction, for a period of time, before it is shut down. This is beneficial for use in a motor driver and the control of high voltage currents, as it can momentarily handle a higher voltage, allowing the diode to bind with various systems and utilities.

In conclusion, the MBRH20080 is a single diode with multiple and diverse applications. Its p–n junction formation and high reverse leakage current allow it to protect simple circuits, while its robust construction enables it to break open in the event of an overload. It is ideal for use in high voltage circuits, motor drivers and in inverters. Its high reverse voltage avalanche allows the diode to handle a higher voltage and the current to flow in the opposite direction, for a short period of time, before it is shut down, making it a valuable asset to industrial systems.

The specific data is subject to PDF, and the above content is for reference

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