MBRTA40030RL

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Configuration:	1 Pair Common Anode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	30V
Current - Average Rectified (Io) (per Diode):	200A
Voltage - Forward (Vf) (Max) @ If:	580mV @ 200A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	3mA @ 30V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Three Tower
Supplier Device Package:	Three Tower

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MBRTA40030RL Diodes - Rectifiers - Arrays Application Field and Working Principle

The MBRTA40030RL is a rectifier from the Diodes - Rectifiers - Arrays series.The rectifiers are semiconductor solutions designed for use in applications requiring a high degree of power conversion efficiencies.They are used in semiconductor devices such as memory chips and microcircuits, as well as in power conditioners and power rectification applications. The MBRTA40030RL specifically is a dual rectifier package.It consists of two Schottky rectifying diodes in a hermetically sealed TO-220 package, hence its dual-diode operation capability.The device features a built-in temperature sensor, as well as high-frequency switching capabilities and a low forward volt drop (VF) of 1V. It also has an operating temperature range of -55°C to 125°C and a maximum reverse current of 300 nA. The rectifier package is designed for use in applications where high power conversion efficiency, repeatable operation and Wide Temperature Range operation is required.The feature set of the MBRTA40030RL ensures that it can handle up to 30A of forward current and 40A of reverse current, and it also has a high tolerance for load variations, as well as being immune to voltage spikes. Rectifier packages such as the MBRTA40030RL have an easy and straightforward way of working. When current is applied to the rectifier through the input terminals, the device conducts a flow of electrons. This flow is directed swiftly through the p-type material, which reduces the electrical resistance of the material and allows the electrons to move freely. This movement of electricity is responsible for the high power conversion efficiencies of rectifier packages.The basic working principle of all rectifiers relies on one key aspect: the operation of a p-n junction. When current is applied to the rectifier package, two parallel junctions start to form. Also, when the applied voltage exceeds a certain threshold, abrupt changes occur and a small current, known as a leakage current, begins to flow through the diode. This current is conducted through the Schottky barrier, which is formed in the p-n junction due to the depletion of the negative space charge from the junction.The Schottky barrier forms a thin depletion layer, which prevents current from flowing back into the p-n junction. This in turn reduces the electrical resistance of the material and allows electricity to move freely in the form of direct current. The leakage current, thus, starts flowing in the rectifier package, and the power conversion efficiency of the rectifier package increases. This high power conversion efficiency of rectifier packages like the MBRTA40030RL is what makes them an optimal choice for applications demanding efficient power conversion and reliable operation. Rectifier packages such as the MBRTA40030RL are especially useful in AC-DC and DC-DC power conversion applications because they offer high power efficiency and high stability. The device is also well suited for applications in consumer electronics, automotive and electronic communication systems as it offers a wide temperature range operation and high reverse current tolerance.

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