MBT35200MT2G Allicdata Electronics
Allicdata Part #:

MBT35200MT2G-ND

Manufacturer Part#:

MBT35200MT2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 35V 2A 6-TSOP
More Detail: Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW S...
DataSheet: MBT35200MT2G datasheetMBT35200MT2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: MBT35200
Description

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The MBT35200MT2G belongs to the transistors - bipolar (BJT) - single category. As a single transistor type, it has a diverse array of applications.

The MBT35200MT2G is a mixture of two different kinds of transistors – a PNP and an NPN. A PNP transistor is a semiconductor-based device that has three terminals – the collector, base and emitter. It switches itself on when a small current is passed through the base terminal. The NPN transistor is the inverse – it switches itself off when a current is passed through the base terminal.

The MBT35200MT2G is used in many high current applications. It is designed to control up to 150V and 12A of continuous current at temperatures up to 150C. This heralds it as a perfect choice for applications that need to cope with high current spikes while keeping temperatures regulated. It is used in switching converters, telecom apps and power supplies.

Apart from its ability to control high current spikes, the MBT35200MT2G also offers excellent stability and reliability. This makes it a preferred choice for applications that demand exact control of an energy load. It also offers high immunity to EMI and ESD, which makes it suitable for communications and other sensitive systems.

The working principle of the MBT35200MT2G is quite straightforward. When the transistor is connected to a source of power, a current will flow from the source, through the base terminal, and out of the collector terminal. As the current flow increases and surpasses a certain level, the transistor will conduct and regulate the current. This flow of current forms an electrical circuit and if the current is interrupted at any point, the electrical circuit will be broken and the transistor will switch off.

In conclusion, the MBT35200MT2G is an excellent choice as a power regulating device. Its versatility and wide range of applications make it a great option for a wide variety of tasks. Whether you need to control large currents or regulate a high-voltage energy source, the MBT35200MT2G offers the perfect solution.

The specific data is subject to PDF, and the above content is for reference

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