MC13770FCR2 Allicdata Electronics
Allicdata Part #:

MC13770FCTR-ND

Manufacturer Part#:

MC13770FCR2

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: IC RF LN AMP W-CDMA QFN-12
More Detail: RF Amplifier IC W-CDMA 2.1GHz ~ 2.4GHz 12-QFN (3x3...
DataSheet: MC13770FCR2 datasheetMC13770FCR2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Frequency: 2.1GHz ~ 2.4GHz
P1dB: --
Gain: 15dB
Noise Figure: 1.5dB
RF Type: W-CDMA
Voltage - Supply: 2.7 V ~ 3 V
Current - Supply: 8mA
Test Frequency: 2.14GHz
Package / Case: 12-VFQFN Exposed Pad
Supplier Device Package: 12-QFN (3x3)
Description

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RF amplifiers are widely used in wireless communications that require a signal output that can be further amplified. The MC13770FCR2 is an RF amplifier that is specially designed to provide a clean, high gain signal amplification while maintaining a low cost. It is a versatile device that can be used in a variety of applications, from low-frequency broadcast applications to high-frequency wireless communications.

The MC13770FCR2 is a high-performance bipolar RF amplifier with a single chip architecture. It is designed to provide a low distortion, high gain, RF output signal with a wide dynamic range. The device is capable of providing a highly linear amplification with an output power up to +46 dBm, and a gain of up to +28 dB. It also offers excellent sensitivity and noise performance with low power consumption for battery powered applications.

The MC13770FCR2 is ideal for use as an output stage amplifier in a variety of devices, including base station amplifiers, cellular repeaters, and industrial control and monitoring systems. It can also be used as part of a wideband RF transceiver system, such as satellite television receivers. Additionally, the device can be used in various low-noise wideband applications, such as video receivers and FM transmitters.

The working principle of the MC13770FCR2 is based on the use of its integrated bipolar transistor technology. The device employs a common-emitter configuration with two interleaved transistors for its amplification. Each transistor is biased to operate at a different current level, allowing it to provide a higher gain than a single transistor configuration. This common-emitter configuration also helps to reduce distortion and improve linearity, providing a wide dynamic range even at higher power levels.

The MC13770FCR2 is designed to provide high gain, low distortion, and low noise performance in a variety of applications. Its single chip architecture makes it ideal for low-cost, low-power designs, while its wide dynamic range ensures that it can deliver a clean signal even in challenging conditions. With its wide range of features and wide bandwidth, the MC13770FCR2 is a powerful and reliable choice for RF amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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