| Allicdata Part #: | MC13770FCTR-ND |
| Manufacturer Part#: |
MC13770FCR2 |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | NXP USA Inc |
| Short Description: | IC RF LN AMP W-CDMA QFN-12 |
| More Detail: | RF Amplifier IC W-CDMA 2.1GHz ~ 2.4GHz 12-QFN (3x3... |
| DataSheet: | MC13770FCR2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Frequency: | 2.1GHz ~ 2.4GHz |
| P1dB: | -- |
| Gain: | 15dB |
| Noise Figure: | 1.5dB |
| RF Type: | W-CDMA |
| Voltage - Supply: | 2.7 V ~ 3 V |
| Current - Supply: | 8mA |
| Test Frequency: | 2.14GHz |
| Package / Case: | 12-VFQFN Exposed Pad |
| Supplier Device Package: | 12-QFN (3x3) |
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RF amplifiers are widely used in wireless communications that require a signal output that can be further amplified. The MC13770FCR2 is an RF amplifier that is specially designed to provide a clean, high gain signal amplification while maintaining a low cost. It is a versatile device that can be used in a variety of applications, from low-frequency broadcast applications to high-frequency wireless communications.
The MC13770FCR2 is a high-performance bipolar RF amplifier with a single chip architecture. It is designed to provide a low distortion, high gain, RF output signal with a wide dynamic range. The device is capable of providing a highly linear amplification with an output power up to +46 dBm, and a gain of up to +28 dB. It also offers excellent sensitivity and noise performance with low power consumption for battery powered applications.
The MC13770FCR2 is ideal for use as an output stage amplifier in a variety of devices, including base station amplifiers, cellular repeaters, and industrial control and monitoring systems. It can also be used as part of a wideband RF transceiver system, such as satellite television receivers. Additionally, the device can be used in various low-noise wideband applications, such as video receivers and FM transmitters.
The working principle of the MC13770FCR2 is based on the use of its integrated bipolar transistor technology. The device employs a common-emitter configuration with two interleaved transistors for its amplification. Each transistor is biased to operate at a different current level, allowing it to provide a higher gain than a single transistor configuration. This common-emitter configuration also helps to reduce distortion and improve linearity, providing a wide dynamic range even at higher power levels.
The MC13770FCR2 is designed to provide high gain, low distortion, and low noise performance in a variety of applications. Its single chip architecture makes it ideal for low-cost, low-power designs, while its wide dynamic range ensures that it can deliver a clean signal even in challenging conditions. With its wide range of features and wide bandwidth, the MC13770FCR2 is a powerful and reliable choice for RF amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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MC13770FCR2 Datasheet/PDF