MCH4013-TL-E Allicdata Electronics
Allicdata Part #:

MCH4013-TL-E-ND

Manufacturer Part#:

MCH4013-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 15MA 3.5V MCPH4
More Detail: RF Transistor NPN 3.5V 15mA 22.5GHz 50mW Surface M...
DataSheet: MCH4013-TL-E datasheetMCH4013-TL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 22.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 16dB
Power - Max: 50mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-MCPH
Description

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The MCH4013-TL-E is a bipolar silicon RF transistor. With low noise and high gain, it is an ideal transistor for many applications within consumer and professional electronics. In this article, we will explore the application field and working principle of the MCH4013-TL-E.

Application Field

The MCH4013-TL-E has many uses in consumer and professional electronics, but it is particularly suitable as an amplifier in RF applications. It is perfect for use in wireless communication systems and wireless audio and video applications. Due to its low noise and high gain, it can be used as a low noise amplifier (LNA) or a power amplifier, depending on the requirements of the application. It is often used in receivers and transmitters of radio or satellite signals, as well as for audio and video gain control.

Working Principle

The MCH4013-TL-E is a bipolar transistor, meaning that it requires two types of charge carriers, namely electrons and holes. It is also an NPN transistor, meaning that the current flows from the negative terminal to the positive terminal. The bipolar junction transistor (BJT) works based on the output current being controlled by the input current, depending on the relative potential difference between them. The MCH4013-TL-E has two main parts, the emitter and the collector. As current passes through the emitter, electrons are released and travel towards the collector. The collector has a higher potential than the emitter, which helps the electrons travel faster, resulting in higher gain. The gain and impedance of the MCH4013-TL-E are usually determined by the biasing circuitry.

Conclusion

The MCH4013-TL-E is a bipolar silicon RF transistor with low noise and high gain. It is perfect for use as an amplifier in wireless communication systems, radio or satellite receivers and transmitters, and audio and video applications. The transistor works based on the output current being controlled by the input current, depending on the relative potential difference between the emitter and the collector. The gain and impedance of the MCH4013-TL-E are usually determined by the biasing circuitry.

The specific data is subject to PDF, and the above content is for reference

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