MCH4015-TL-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	10GHz
Noise Figure (dB Typ @ f):	1.2dB @ 1GHz
Gain:	17dB
Power - Max:	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 50mA, 5V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	4-MCPH

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MCH4015-TL-H Application Field and Working Principle

MCH4015-TL-H transistors are widely used in RF and audio frequency range, such as for radio frequency (RF) and ham applications. They are designed to stay cool and provide superior performance in a wide range of applications. The MCH4015-TL-H is a complementary bipolar junction transistor (BJT) designed for the high voltage and high current operations. It is composed of two separate transistors which are interconnected to produce a single output signal.

Overview

The MCH4015-TL-H has a 25 V forward voltage rating, a 50 V reverse voltage rating, and a 100 mA continuous collector current rating. It is mainly used to amplify and switch RF and audio signals, as well as to drive relays, small motors, and other various loads. It features a low capacitance of 0.7 pF, a high gain of 110 dB, and a low collector-emitter saturation voltage of 0.08 V. It also has a low noise figure of 3.0 dB and a high voltage gain of 80 dB. The MCH4015-TL-H is available in two packages, a standard leaded package and a surface-mount device (SMD) package.

Application Fields

MCH4015-TL-H transistors are mainly used in audio and RF amplification and switching applications. They are well suited for automotive, industrial, medical, and consumer applications. In audio applications, they can be used for amplifying sound, driving loudspeakers, and providing gain in audio circuits. In RF applications, they can be used for amplifying signals in communication systems, antenna preamplifiers, and oscillators. They can also be used in switching applications such as the driving of relays and small motors or loads.

Working Principle

The MCH4015-TL-H is a bipolar junction transistor, which means it is composed of two separate transistors known as an emitter and a collector that are connected together. When an electric current is applied to the emitter, it creates a small electric field that passes through both transistors. This electric field causes electrons to leave the emitter, creating a negatively charged region in the base of the transistor which is known as the base-emitter junction.The base-emitter junction attracts electrons from the collector, causing them to flow across the junction. This creates a small current which is then amplified by the collector. The gain of the transistor is determined by the base-emitter junction\'s electric field, which is known as the junction’s forward resistance. The more forward resistance the junction has, the higher the gain. The MCH4015-TL-H has a high forward resistance, which produces a higher gain than other transistors. It also has a low noise figure and a high voltage gain, which makes it well-suited for RF and audio applications where high gain and low noise are required.

Conclusion

The MCH4015-TL-H bipolar junction transistor is commonly used in RF and audio frequency range applications such as in radio frequency and ham radio operations. It offers a high gain of 110 dB, a low capacitance of 0.7 pF, and a low collector-emitter saturation voltage of 0.08 V. It is available in two packages, a standard leaded package and a surface-mount device (SMD) package. Its working principle involves an emitter and a collector, which create a small electric field that passes through both transistors and causes electrons to move across the base-emitter junction, producing a small current which is then amplified by the collector.

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