MCH4014-TL-H Allicdata Electronics
Allicdata Part #:

MCH4014-TL-HOSTR-ND

Manufacturer Part#:

MCH4014-TL-H

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 12V 30MA MCPH4
More Detail: RF Transistor NPN 12V 30mA 10GHz 350mW Surface Mou...
DataSheet: MCH4014-TL-H datasheetMCH4014-TL-H Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09228
6000 +: $ 0.08633
15000 +: $ 0.08038
30000 +: $ 0.07938
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 18dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-MCPH
Description

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MCH4014-TL-H is classified as a RF Bipolar Junction Transistor (BJT). This type of transistor comprises of three terminals i.e. Emitter, Base and Collector and it is widely used for diverse purposes. The high-frequency performance of this BJT is suitable in making radio based communications and signals. Additionally, it has the ability of providing low power and low voltage control, with an excellent radio frequency range.

The MCH4014-TL-H is capable of operating within the voltage range of 5.8 V to 28 V, and with a Collector‐Emitter voltage Vce of 14 V. It has a maximum collector-base current gain of 10, with a maximum collector current of 500 mA. Furthermore, its collector-emitter saturation voltage DC is 0.2 V and a DC current gain of 60.

The most common application fields of MCH4014-TL-H are amplifiers circuits, radio receivers, base station applications, and microwave system. It is also used in special applications such as switch mode power supplies, light dimming circuits, clipper circuits, oscillators, and so on. In addition, it is often used in high-frequency amplifying devices, and push-pull amplifying devices.

This BJT has typical features like high transit frequency, high frequency gain, low noise figure, and highbandwidth. The maximum frequency of the transistor is 500 MHz and its operating temperature range is from -55°C to +150°C. Furthermore, it has a collector-base capacitance of 1.5 pF and emitter-base capacitance of 0.63 pF.

In terms of its working principle, the MCH4014-TL-H uses its three terminals i.e. emitter, base and collector, to produce the necessary action. Generally, the base is employed as a control point. When a low voltage is given to the base, current is allowed to flow from the collector to the emitter. However, when the base voltage increases, current is stopped from flowing from the collector to the emitter.

In conclusion, the MCH4014-TL-H is a RF Bipolar Junction Transistor (BJT) with typical features like high transit frequency, high frequency gain, low noise figure, and highbandwidth. It is capable of operating within a 5.8 V to 28 V voltage range and with a Collector‐Emitter voltage Vce of 14 V. It has various applications in amplifiers circuits, radio receivers, base station applications, switch mode power supplies, light dimming circuits, clipper circuits, oscillators, and more. Most importantly, its working principle is based on how its three terminals i.e. emitter, base and collector, are given signals to produce the necessary action.

The specific data is subject to PDF, and the above content is for reference

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