Allicdata Part #: | MCH5908G-TL-EOSTR-ND |
Manufacturer Part#: |
MCH5908G-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET 2N-CH 0.3W MCPH5 |
More Detail: | JFET 2 N-Channel (Dual) 50mA 300mW Surface Mount ... |
DataSheet: | MCH5908G-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
Current - Drain (Idss) @ Vds (Vgs=0): | 10mA @ 5V |
Current Drain (Id) - Max: | 50mA |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 100µA |
Input Capacitance (Ciss) (Max) @ Vds: | 10.5pF @ 5V |
Power - Max: | 300mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 5-SMD, Flat Leads |
Supplier Device Package: | 5-MCPH |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JFETs are widely used in various applications for their ability to accurately control the current flow between two points. The MCH5908G-TL-E Field Effect Transistor (FET), manufactured by Microchip Technology Inc., is a single channel, N-channel JFET that offers enhanced performance and features that make it highly sought after for its precision and accuracy in controlling current flow. The MCH5908G-TL-E is capable of providing full control over a wide voltage range, making it invaluable for applications ranging from amplifier and motor control to semiconductor switching and rectification.
The MCH5908G-TL-E uses a process called "self-aligned construction" to create a uniform and reliable electrical contact. This technology improves the reliability of the parts and eliminates the need for a separate contact etching process. It allows the parts to achieve higher speed switching, higher current density, better thermal performance, and better gate control. This self-aligned approach also allows the devices to operate at very low temperatures and under extreme conditions.
The MCH5908G-TL-E is designed for low current switching applications. This means that the device operates within the range of 30-300 µA per channel. The device can work at a wide range of temperatures, from -55 to +125°C. This allows for increased flexibility in the application, making it suitable for a variety of designs and installations. Additionally, the MCH5908G-TL-E utilizes a MOSFET chip that provides improved performance over traditional JFETs.
The working principle of the MCH5908G-TL-E is based on the field effect principle. This means that the device works by controlling the flow of electricity through an insulated gate. The gate is driven by the action of an external voltage that acts as a gate-driving voltage, allowing the transistor to control the current that flows between two points. In the MCH5908G-TL-E, the gate-driving voltage operates in the range of 2-20V. This allows the current to be controlled within a specific range.
The MCH5908G-TL-E is ideal for a variety of applications that require accurate controlling of current. It has outstanding performance, providing the highest efficiency and accuracy. It is ideal for circuit designs that require high current density and low power consumption. The MCH5908G-TL-E is available in several sizes, from small 130 mil SOP-8 to large 300 mil SOIC-16 packages, which makes it ideal for applications requiring smaller footprints.
The MCH5908G-TL-E is a great option for anyone who needs high performance and accuracy in controlling the flow of current. This reliable and durable device offers a wide range of features and benefits, making it the ideal choice for any device or application that requires precise control and operation. This jFET is sure to provide years of reliable service.
The specific data is subject to PDF, and the above content is for reference
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