MCH5839-TL-W Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MCH5839-TL-W is a P-channel power MOSFET device which are designed for high-efficiency and high-frequency switching in SMPS, DC-DC and similar converter applications. The device combines advanced Power MOSFET technology with low gate charge and low on-state resistance which makes it suitable for a variety of applications.

When voltage is applied to the gate of the device, it will turn on, allowing the current to pass from the source to the drain. The gates of power MOSFETs are typically more sensitive than those of a common transistor as they require very little current to be activated. This makes them a great choice when switching applications where low power consumption is important.

The MCH5839-TL-W is a 500V rated device with 20 Vgs threshold voltage and 12.5A continuous drain current. It has a fast switching time of 10ns with a low gate capacitance of 4.1 nF. The maximum junction temperature of the device is 150°C. The device has an NS Package Outline with a TO-220AB package.

The switching capability of the MCH5839-TL-W makes it ideal for a wide range of applications. Some of the most common uses for this device is for switching supplies, current regulation, and motor drives. This MOSFET is also suitable for low-frequency switching circuits, pulse-width modulators, and high-efficiency DC-DC converters.

In addition to the aforementioned applications, the MCH5839-TL-W can also be used in converters, rectifiers, AC-DC and DC-DC switching power supplies. This device is also used in other high-frequency applications such as LCD displays, radio frequency modulation and demodulation, automotive power switching, and power supply designs requiring ultra-low noise.

The MCH5839-TL-W is a rugged and reliable power MOSFET device. It has an 110°C/W thermal resistance and an increased frequency rating up to 2.0MHz. It also features a high dV/dt for greater noise immunity, making it an ideal choice for high-reliability applications.

The MCH5839-TL-W is a reliable and effective device for a variety of switching applications. Its low gate charge, high current-carrying capability, and low on-state resistance make it an attractive choice for designers in need of a flexible and efficient power MOSFET. The device’s rugged construction, higher frequency rating and noise immunity make it an optimal choice for more demanding high-reliability applications.

The specific data is subject to PDF, and the above content is for reference