Allicdata Part #: | MD2009DFX-ND |
Manufacturer Part#: |
MD2009DFX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 700V 10A ISOWATT218FX |
More Detail: | Bipolar (BJT) Transistor NPN 700V 10A 58W Through... |
DataSheet: | MD2009DFX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 700V |
Vce Saturation (Max) @ Ib, Ic: | 2.8V @ 1.4A, 5.5A |
Current - Collector Cutoff (Max): | 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 5.5A, 5V |
Power - Max: | 58W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | ISOWATT218FX |
Supplier Device Package: | ISOWATT-218FX |
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The MD2009DFX is a single bipolar junction transistor (BJT) device that offers a greater degree of performance than is achievable with other BJT devices. This device is most commonly used in fields where higher levels of current are required such as RF applications and power control circuits. This transistor is especially well suited for applications requiring higher levels of current such as high-frequency switching and amplification stages.
Working Principle
The MD2009DFX is designed so that it can switch and amplify high-frequency signals. For this to be possible, the device must be able to handle large amounts of current and be able to switch very quickly. In order to achieve this, the device is designed as a single bipolar junction transistor (BJT). A BJT has three layers, the Collector, the Base and the Emitter, and the current flows between it. The Base layer is the control layer and is responsible for controlling the current flow, allowing for fast and accurate switching of the transistor.
The Collector and Emitter layers are both connected to a source and sink of current respectively. When the Base layer is biased, the current will flow from the Collector to the Emitter, which will amplify the signal desire. By controlling the voltage across the Base layer, the flow of current can be adjusted to achieve a desired result.
Application Fields
The MD2009DFX is an ideal device for RF applications. Its fast switching times, high current capabilities, and low noise levels make it ideal for use in radios, transceivers, transmitters and receivers. It is also commonly used in power control applications, such as motor controllers, voltage converters, and power supplies.
The MD2009DFX is also well suited for analog applications, such as instrumentation and audio systems. High-fidelity amplifier and pre-amp stages, as well as communication amplifiers, can benefit from the increased current and low noise provided by the device.
Finally, the MD2009DFX can also be used in digital applications. Due to its fast switching times, low power requirements and low noise levels, it is perfect for high-speed logic gates, multiplexers and digital-to-analog converters.
The specific data is subject to PDF, and the above content is for reference
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