MG06100S-BN4MM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MG06100S-BN4MM is a semiconductor module based on insulated-gate bipolar transistor (IGBT). This module is designed to be used in a wide range of applications, including power electronics, industrial and automotive applications. The MG06100S-BN4MM is also a popular choice for high-frequency SMPS circuits, since it can offer higher operating frequencies and reduced conduction losses, in turn providing higher system efficiency.

The MG06100S-BN4MM module is unique in its construction. It features an IGBT substrate, and a field-stop layer. The IGBT substrate is made of silicon carbide (SiC) or silicon nitride (SiN). This substrate provides a thick insulation layer between the internal circuitry, which improves the avalanche rating of the device. The field-stop layer, which is made of a specific oxide, serves to control electric field strength and reduce any power losses associated with the device’s operation.

The working principle of the MG06100S-BN4MM module is based on the electric charge transfer through the insulated-gate structure. As a current flows, the electrons in the gate are capacitatively charged, which in turn causes a change in the voltage across the insulated-gate. This change in voltage subsequently causes the current flow to be diverted, allowing the IGBT to either turn on or off. The MG06100S-BN4MM uses an on-off triggering scheme, which ensures a short circuit protection and enables an efficient current flow.

The MG06100S-BN4MM module is designed specifically to control current flow in power electronics applications like motor control and power conversion. Its wide operating frequency (up to 10 kHz) allows for the construction of efficient and compact high-frequency power converters. Furthermore, the device is protected against overvoltage and overcurrent situations, making it suitable for automotive applications.

The MG06100S-BN4MM is a reliable and efficient semiconductor module which is suitable for a wide range of applications. It features a robust design, with an IGBT substrate and field-stop layer, and its on-off triggering scheme enables a high-frequency and high current transfer characteristics. Furthermore, its wide operating frequency makes it an ideal choice for power electronics applications, while its protection circuit ensures that it can be used safely in automotive applications. As such, the MG06100S-BN4MM is a popular choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference