MG06600WB-BN4MM Allicdata Electronics
Allicdata Part #:

F6485-ND

Manufacturer Part#:

MG06600WB-BN4MM

Price: $ 104.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT 600V 700A 1500W PKG WB
More Detail: IGBT Module Half Bridge 600V 700A 1500W Chassis M...
DataSheet: MG06600WB-BN4MM datasheetMG06600WB-BN4MM Datasheet/PDF
Quantity: 1
1 +: $ 94.92840
10 +: $ 90.34830
25 +: $ 87.07510
Stock 1Can Ship Immediately
$ 104.43
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 700A
Power - Max: 1500W
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 600A (Typ)
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 39nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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MG06600WB-BN4MM is an IGBT module with a maximum power rating of 600 volts and 4500 amps. This module is typically used in applications such as motor control, power supplies, welding and industrial drives. The operating temperature range is -40 °C to 125 °C.

IGBTs are a type of power semiconductor device that is often used in power electronics applications. They have a very fast switching speed, low conduction losses and are capable of supporting higher voltages compared with other types of power semiconductors. IGBTs are also commonly used in inverter circuits as they can provide a high efficiency, low cost solution when compared to other technologies.

The working principle of IGBTs is based on the switching action of two transistors. The first transistor, called the control transistor, operates in the linear region. This allows the device to be controlled directly through a gate voltage, allowing faster switching speeds and higher voltages. The second transistor, called the collector-emitter transistor, operates in the saturated region. When this transistor is turned on, the collector-base voltage is typically very low, allowing the device to turn off faster. When the control transistor is turned off, the collector-emitter transistor operates in the reverse breakdown region, allowing the device to safely switch even at very high voltages.

The MG06600WB-BN4MM is a perfect choice for applications requiring the current capacity and switching speeds that the IGBT technology provides. With a maximum voltage of 600 volts and current of 4500 amps, this module is capable of supporting a wide range of applications. The operating temperature range of -40 °C to 125 °C also makes it suitable for a variety of different environments and applications.

In summary, the MG06600WB-BN4MM is an IGBT module that is capable of providing a high level of current capacity and switching speeds required in applications such as motor control, power supplies, welding and industrial drives. The module is capable of operating in a wide range of temperatures and provides an efficient, cost effective solution when compared to other technologies.

The specific data is subject to PDF, and the above content is for reference

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